Recent progress on the electronic structure, defect, and doping properties of Ga2O3

• Published in: APL materials Vol. 8; no. 2; pp. 020906 - 020906-35
• Main Authors: Zhang, Jiaye, Shi, Jueli, Qi, Dong-Chen, Chen, Lang, Zhang, Kelvin H. L.
• Format: Journal Article
• Language: English
• Published: AIP Publishing LLC 01.02.2020

Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high breakdown field of 8 MV/cm, and high thermal stability. These properties enable Ga2O3 a promising material for a large range of applications,...