APA (7th ed.) Citation

Yang, J., Wegner, A., Brown, C. M., & Louca, D. (2018). Defect-driven extreme magnetoresistance in an I-Mn-V semiconductor. Applied physics letters, 113(12), . https://doi.org/10.1063/1.5040364

Chicago Style (17th ed.) Citation

Yang, Junjie, Aaron Wegner, Craig M. Brown, and Despina Louca. "Defect-driven Extreme Magnetoresistance in an I-Mn-V Semiconductor." Applied Physics Letters 113, no. 12 (2018). https://doi.org/10.1063/1.5040364.

MLA (9th ed.) Citation

Yang, Junjie, et al. "Defect-driven Extreme Magnetoresistance in an I-Mn-V Semiconductor." Applied Physics Letters, vol. 113, no. 12, 2018, https://doi.org/10.1063/1.5040364.