Enhancing the Infrared Photoresponse of Silicon by Controlling the Fermi Level Location within an Impurity Band
Strong absorption of sub‐band gap radiation by an impurity band has recently been demonstrated in silicon supersaturated with chalcogen impurities. However, despite the enhanced absorption in this material, the transformation of infrared radiation into an electrical signal via extrinsic photoconduct...
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| Published in | Advanced functional materials Vol. 24; no. 19; pp. 2852 - 2858 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
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Blackwell Publishing Ltd
01.05.2014
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Strong absorption of sub‐band gap radiation by an impurity band has recently been demonstrated in silicon supersaturated with chalcogen impurities. However, despite the enhanced absorption in this material, the transformation of infrared radiation into an electrical signal via extrinsic photoconductivity—the critical performance requirement for many optoelectronic applications—has only been reported at low temperature because thermal impurity ionization overwhelms photoionization at room temperature. Here, dopant compensation is used to manipulate the optical and electronic properties and thereby improve the room‐temperature infrared photoresponse. Silicon co‐doped with boron and sulfur is fabricated using ion implantation and nanosecond pulsed laser melting to achieve supersaturated sulfur concentrations and a matched boron distribution. The location of the Fermi level within the sulfur‐induced impurity band is controlled by tuning the acceptor‐to‐donor ratio, and through this dopant compensation, three orders of magnitude improvement in infrared detection at 1550 nm is demonstrated.
Silicon doped with sulfur to supersaturated concentrations exhibits strong sub‐band gap extrinsic absorption from a dopant induced impurity band. By tuning the Fermi level using dopant compensation, it is possible to tailor the infrared photoresponse, demonstrating, for the first time, room‐temperature extrinsic photoconductivity in this material using photon energies below the silicon band gap. |
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| AbstractList | Strong absorption of sub‐band gap radiation by an impurity band has recently been demonstrated in silicon supersaturated with chalcogen impurities. However, despite the enhanced absorption in this material, the transformation of infrared radiation into an electrical signal via extrinsic photoconductivity—the critical performance requirement for many optoelectronic applications—has only been reported at low temperature because thermal impurity ionization overwhelms photoionization at room temperature. Here, dopant compensation is used to manipulate the optical and electronic properties and thereby improve the room‐temperature infrared photoresponse. Silicon co‐doped with boron and sulfur is fabricated using ion implantation and nanosecond pulsed laser melting to achieve supersaturated sulfur concentrations and a matched boron distribution. The location of the Fermi level within the sulfur‐induced impurity band is controlled by tuning the acceptor‐to‐donor ratio, and through this dopant compensation, three orders of magnitude improvement in infrared detection at 1550 nm is demonstrated.
Silicon doped with sulfur to supersaturated concentrations exhibits strong sub‐band gap extrinsic absorption from a dopant induced impurity band. By tuning the Fermi level using dopant compensation, it is possible to tailor the infrared photoresponse, demonstrating, for the first time, room‐temperature extrinsic photoconductivity in this material using photon energies below the silicon band gap. Strong absorption of sub-band gap radiation by an impurity band has recently been demonstrated in silicon supersaturated with chalcogen impurities. However, despite the enhanced absorption in this material, the transformation of infrared radiation into an electrical signal via extrinsic photoconductivity-the critical performance requirement for many optoelectronic applications-has only been reported at low temperature because thermal impurity ionization overwhelms photoionization at room temperature. Here, dopant compensation is used to manipulate the optical and electronic properties and thereby improve the room-temperature infrared photoresponse. Silicon co-doped with boron and sulfur is fabricated using ion implantation and nanosecond pulsed laser melting to achieve supersaturated sulfur concentrations and a matched boron distribution. The location of the Fermi level within the sulfur-induced impurity band is controlled by tuning the acceptor-to-donor ratio, and through this dopant compensation, three orders of magnitude improvement in infrared detection at 1550 nm is demonstrated. Silicon doped with sulfur to supersaturated concentrations exhibits strong sub-band gap extrinsic absorption from a dopant induced impurity band. By tuning the Fermi level using dopant compensation, it is possible to tailor the infrared photoresponse, demonstrating, for the first time, room-temperature extrinsic photoconductivity in this material using photon energies below the silicon band gap. Strong absorption of sub‐band gap radiation by an impurity band has recently been demonstrated in silicon supersaturated with chalcogen impurities. However, despite the enhanced absorption in this material, the transformation of infrared radiation into an electrical signal via extrinsic photoconductivity—the critical performance requirement for many optoelectronic applications—has only been reported at low temperature because thermal impurity ionization overwhelms photoionization at room temperature. Here, dopant compensation is used to manipulate the optical and electronic properties and thereby improve the room‐temperature infrared photoresponse. Silicon co‐doped with boron and sulfur is fabricated using ion implantation and nanosecond pulsed laser melting to achieve supersaturated sulfur concentrations and a matched boron distribution. The location of the Fermi level within the sulfur‐induced impurity band is controlled by tuning the acceptor‐to‐donor ratio, and through this dopant compensation, three orders of magnitude improvement in infrared detection at 1550 nm is demonstrated. |
| Author | Simmons, Christie B. Akey, Austin J. Recht, Daniel Mailoa, Jonathan P. Buonassisi, Tonio Aziz, Michael J. |
| Author_xml | – sequence: 1 givenname: Christie B. surname: Simmons fullname: Simmons, Christie B. email: Christie.simmons@gmail.com organization: Massachusetts Institute of Technology, MA, 02139, Cambridge, USA – sequence: 2 givenname: Austin J. surname: Akey fullname: Akey, Austin J. organization: Massachusetts Institute of Technology, MA, 02139, Cambridge, USA – sequence: 3 givenname: Jonathan P. surname: Mailoa fullname: Mailoa, Jonathan P. organization: Massachusetts Institute of Technology, MA, 02139, Cambridge, USA – sequence: 4 givenname: Daniel surname: Recht fullname: Recht, Daniel organization: Harvard School of Engineering and Applied Sciences, MA, 02138, Cambridge, USA – sequence: 5 givenname: Michael J. surname: Aziz fullname: Aziz, Michael J. organization: Harvard School of Engineering and Applied Sciences, MA, 02138, Cambridge, USA – sequence: 6 givenname: Tonio surname: Buonassisi fullname: Buonassisi, Tonio organization: Massachusetts Institute of Technology, MA, 02139, Cambridge, USA |
| BookMark | eNqFkE1PGzEQQK0KpELgytnHXja144_dHCFlIdK2ID4EN8v2jhuXXTu1N6T59w1Kibj1MjOH9-bwjtFBiAEQOqNkTAmZfNWt68cTQhlh1YR8QkdUUlkwMqkO9jd9_oyOc_5FCC1Lxo9QvAwLHawPP_GwADwPLukELb5dxCEmyMsYMuDo8L3vvI0Bmw2exTCk2HXvUg2p97iBV-hwE60e_JZb-2HhA9YBz_vlKvlhgy90aE_QodNdhtN_e4Qe68uH2XXR3FzNZ-dNYbmUpHBGc0GFZOVUt8wQQux28FZokNRxVhEQ1DhpWsG50VNjtLOCVVJyXklr2Ah92f1dpvh7BXlQvc8Wuk4HiKusqOCUE1ZW5RYd71CbYs4JnFom3-u0UZSot7Lqrazal90K052w9h1s_kOr82_1949usXN9HuDP3tXpRcmSlUI9_bhSF7OnOyrqRgn2F3qHjug |
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| ContentType | Journal Article |
| Copyright | 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim |
| Copyright_xml | – notice: 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim |
| DBID | BSCLL AAYXX CITATION 7SP 7SR 7U5 8BQ 8FD JG9 L7M |
| DOI | 10.1002/adfm.201303820 |
| DatabaseName | Istex CrossRef Electronics & Communications Abstracts Engineered Materials Abstracts Solid State and Superconductivity Abstracts METADEX Technology Research Database Materials Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Materials Research Database Engineered Materials Abstracts Technology Research Database Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Advanced Technologies Database with Aerospace METADEX |
| DatabaseTitleList | Materials Research Database CrossRef |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1616-3028 |
| EndPage | 2858 |
| ExternalDocumentID | 10_1002_adfm_201303820 ADFM201303820 ark_67375_WNG_BCWR15FL_5 |
| Genre | article |
| GrantInformation_xml | – fundername: MIT‐KFUPM Center for Clean Water and Energy – fundername: National Science Foundation (NSF) – fundername: U.S. Army Research Office funderid: W911NF‐12–1–0196 – fundername: Department of Energy (DOE) funderid: EEC‐1041895 – fundername: National Science Foundation grant for Energy, Power, and Adaptive Systems funderid: ECCS‐1102050 |
| GroupedDBID | -~X .3N .GA .Y3 05W 0R~ 10A 1L6 1OC 23M 31~ 33P 3SF 3WU 4.4 4ZD 50Y 50Z 51W 51X 52M 52N 52O 52P 52S 52T 52U 52W 52X 53G 5GY 5VS 66C 6P2 702 7PT 8-0 8-1 8-3 8-4 8-5 8UM 930 A03 AAESR AAEVG AAHHS AANLZ AAONW AASGY AAXRX AAZKR ABCQN ABCUV ABEML ABHUG ABIJN ABJNI ABPVW ACAHQ ACBWZ ACCFJ ACCZN ACGFS ACIWK ACPOU ACSCC ACXBN ACXME ACXQS ADAWD ADBBV ADDAD ADEOM ADIZJ ADKYN ADMGS ADOZA ADXAS ADZMN ADZOD AEEZP AEIGN AEIMD AENEX AEQDE AEUQT AEUYR AFBPY AFFPM AFGKR AFPWT AFVGU AFZJQ AGJLS AHBTC AIURR AIWBW AJBDE AJXKR ALAGY ALMA_UNASSIGNED_HOLDINGS ALUQN AMBMR AMYDB ASPBG ATUGU AUFTA AVWKF AZBYB AZFZN AZVAB BAFTC BDRZF BFHJK BHBCM BMNLL BMXJE BNHUX BROTX BRXPI BSCLL BY8 CS3 D-E D-F DCZOG DPXWK DR2 DRFUL DRSTM EBS EJD F00 F01 F04 F5P FEDTE G-S G.N GNP GODZA H.T H.X HBH HF~ HHY HHZ HVGLF HZ~ IX1 J0M JPC KQQ LATKE LAW LC2 LC3 LEEKS LH4 LITHE LOXES LP6 LP7 LUTES LW6 LYRES MEWTI MK4 MRFUL MRSTM MSFUL MSSTM MXFUL MXSTM N04 N05 N9A NF~ NNB O66 O9- P2P P2W P2X P4D Q.N Q11 QB0 QRW R.K RNS ROL RWI RX1 RYL SUPJJ UB1 V2E W8V W99 WBKPD WFSAM WIH WIK WJL WOHZO WQJ WRC WXSBR WYISQ XG1 XPP XV2 ~IA ~WT AITYG HGLYW OIG AAYXX CITATION 7SP 7SR 7U5 8BQ 8FD JG9 L7M |
| ID | FETCH-LOGICAL-c4660-fba45156379ad3b000cb004d5ae61f4380e51bf6bd544ba9bbafc538664486cb3 |
| IEDL.DBID | DR2 |
| ISSN | 1616-301X |
| IngestDate | Sat Aug 17 02:38:12 EDT 2024 Fri Aug 23 00:33:26 EDT 2024 Sat Aug 24 00:49:38 EDT 2024 Wed Jan 17 05:00:04 EST 2024 |
| IsDoiOpenAccess | false |
| IsOpenAccess | true |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 19 |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c4660-fba45156379ad3b000cb004d5ae61f4380e51bf6bd544ba9bbafc538664486cb3 |
| Notes | MIT-KFUPM Center for Clean Water and Energy U.S. Army Research Office - No. W911NF-12-1-0196 ark:/67375/WNG-BCWR15FL-5 ArticleID:ADFM201303820 National Science Foundation grant for Energy, Power, and Adaptive Systems - No. ECCS-1102050 National Science Foundation (NSF) Department of Energy (DOE) - No. EEC-1041895 istex:1DDFB1449E7EE5EB04E8A4768B1BEF9651FBE3AD ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| OpenAccessLink | https://dash.harvard.edu/bitstream/1/12992314/1/mja246-manuscript.pdf |
| PQID | 1541403787 |
| PQPubID | 23500 |
| PageCount | 7 |
| ParticipantIDs | proquest_miscellaneous_1541403787 crossref_primary_10_1002_adfm_201303820 wiley_primary_10_1002_adfm_201303820_ADFM201303820 istex_primary_ark_67375_WNG_BCWR15FL_5 |
| PublicationCentury | 2000 |
| PublicationDate | 2014-05-01 |
| PublicationDateYYYYMMDD | 2014-05-01 |
| PublicationDate_xml | – month: 05 year: 2014 text: 2014-05-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Advanced functional materials |
| PublicationTitleAlternate | Adv. Funct. Mater |
| PublicationYear | 2014 |
| Publisher | Blackwell Publishing Ltd |
| Publisher_xml | – name: Blackwell Publishing Ltd |
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| SSID | ssj0017734 |
| Score | 2.4380014 |
| Snippet | Strong absorption of sub‐band gap radiation by an impurity band has recently been demonstrated in silicon supersaturated with chalcogen impurities. However,... Strong absorption of sub-band gap radiation by an impurity band has recently been demonstrated in silicon supersaturated with chalcogen impurities. However,... |
| SourceID | proquest crossref wiley istex |
| SourceType | Aggregation Database Publisher |
| StartPage | 2852 |
| SubjectTerms | compensated semiconductors Compensation defect engineering Dopants extrinsic photoconductivity Fermi level Fermi surfaces Impurities impurity band Infrared pulsed laser melting Silicon Sulfur |
| Title | Enhancing the Infrared Photoresponse of Silicon by Controlling the Fermi Level Location within an Impurity Band |
| URI | https://api.istex.fr/ark:/67375/WNG-BCWR15FL-5/fulltext.pdf https://onlinelibrary.wiley.com/doi/abs/10.1002%2Fadfm.201303820 https://search.proquest.com/docview/1541403787 |
| Volume | 24 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV3LS8MwHA6iFz34FueLCKKnzqVNU3vUaX2wiUzF3ULSJipqKnMD9a83v2atmxdBby00tP298iX58gWhnSwUBzqVxAskDTyaKZtSgVAeVVGcRjKSsqD8ty_Z2S296IbdkV38Th-imnCDzCjqNSS4kG_736KhItOwkxxqsO3FbBEGNT1ARZ1KP4pEkVtWZgQIXqRbqjY2_P3x5mO90hQY-H0Mco4C16LnSeaQKL_ZEU6e6oO-rKefP-Qc__NT82h2CEvxoYujBTShzCKaGRErXEL5iXkAcQ5zjy1oxOdG94C8jq8ecjtud1RbhXONrx-fbXgZLD9w0xHhn8tGCVBvcAuISriVu9lCDFPBjwYLg89fXovD9PCRMNkyuk1Obppn3vC4Bi-ljDU8LQW16IgFUSyyANBFCjXBRoNiRIOyvQqJ1ExmIaVSxFIKndp6y2CIyFIZrKBJkxu1inBGDwItNM2oRQ9pIxYEkKTv69gHiUNaQ3ulu_irU-XgTn_Z52BCXpmwhnYLb1aPid4TcNmikN9dnvKj5l2HhEmLhzW0Xbqb2wyDZRNhVD544wROSm8EtrLVkF8475d38sPjpF3drf2l0TqattfUMSs30GS_N1CbFv305VYR4V--__vM |
| link.rule.ids | 315,786,790,1382,27957,27958,46329,46753 |
| linkProvider | Wiley-Blackwell |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV3PT9swFH4acBgc2A9AFNjmSdM4BerEccgROrJ2S6uJgeBm2YkNCHBQaSW2vx6_mGR0F6TtmChWEr8f_vz8-TPApzKWe6ZQNIgUiwJWahdSkdQB00laJCpRqqb8D0e8f8K-ncUNmxD3wnh9iLbghpFR52sMcCxI7_5RDZWlwa3kmITdMDYHCy7m43pWddQqSNEk8QvLnCLFi541uo3dcHe2_cy4tIBdfD8DOp9C13rsyV6Bar7aU06udqYTtVP8_kvQ8b9-6zUsPyJTsu9d6Q280PYtLD3RK1yB6tBeoD6HPScON5KBNWPkr5MfF5Wbunu2rSaVIT8vr52HWaJ-kZ7nwl83jTJk35AcuUokr3zBkGA1-NISacng5rY-T48cSFuuwkl2eNzrB48nNgQF47wbGCWZA0g8SlJZRggwCkwLziE0pwbF7XVMleGqjBlTMlVKmsKlXI6zRF6oaA3mbWX1OpCS7UVGGlYyByCKbiopgskwNGmIKoesA9uNvcStF-YQXoI5FNiFou3CDnyuzdk-JsdXSGdLYnE6-ioOeqdHNM5yEXfgY2Nv4YIMV06k1dX0TlA8LL0bueTWgbC23jPvFPtfsmF7tfEvjT7Ay_7xMBf5YPR9ExbdfeaJllswPxlP9TsHhibqfe3uD5bn_-4 |
| linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1bb9MwGP0Em4TggftEuRoJwVO2Onac5XFrF1boqmkwrW-WHdts2nCq0krAr8dfvISWFyR4TBQryXfzsX18DPDGZGrXVZomTHOWcGNDSjFlE27zosp1rnVD-T-aiMNT_mGaTVd28Ud9iG7CDTOjqdeY4DPjdn6LhirjcCc51uDQi92ETS5YinE9POkEpGiex3VlQZHhRaetbGM_3Vlvv9YtbaKFv69hzlXk2nQ95T1Q7UdHxsnl9nKht6uff-g5_s9f3Ye717iU7MVAegA3rH8Id1bUCh9BfeDPUZ3DfyEBNZKRd3Nkr5Pj8zoM3CPX1pLakU8XVyG-PNE_yCAy4a_aRiVyb8gYmUpkXMfpQoJzwReeKE9GX2fNaXpkX3nzGE7Lg8-Dw-T6vIak4kL0E6cVD_BIsLxQhiG8qLAohHCwgjqUtrcZ1U5ok3GuVaG1clUouALHiKLSbAs2fO3tEyCG7zKnHDc8wIeqXyiKUDJNXZGixiHvwbvWXXIWZTlkFGBOJZpQdibswdvGm91jan6JZLY8k2eT93J_cHZCs3Issx68bt0tQ4rhuonytl5-kxSPSu-zUNp6kDbO-8s75d6wPOqunv5Lo1dw63hYyvFo8vEZ3A63eWRZPoeNxXxpXwQktNAvm2D_BZFp_p0 |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Enhancing+the+Infrared+Photoresponse+of+Silicon+by+Controlling+the+Fermi+Level+Location+within+an+Impurity+Band&rft.jtitle=Advanced+functional+materials&rft.au=Simmons%2C+Christie+B&rft.au=Akey%2C+Austin+J&rft.au=Mailoa%2C+Jonathan+P&rft.au=Recht%2C+Daniel&rft.date=2014-05-01&rft.issn=1616-301X&rft.eissn=1616-3028&rft.volume=24&rft.issue=19&rft.spage=2852&rft.epage=2858&rft_id=info:doi/10.1002%2Fadfm.201303820&rft.externalDBID=NO_FULL_TEXT |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1616-301X&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1616-301X&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1616-301X&client=summon |