Contribution from Ising domains overlapping out-of-plane to perpendicular magnetic anisotropy in Mn4N thin films on MgO(001)

•All significant components of perpendicular magnetic anisotropy are accounted for in ε-Mn4N thin films.•The scaling factor between tetragonal strain in ε-Mn4N and the strain component of anisotropy is quantified.•The most significant component is a large out-of-plane shape component attributed to a...

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Published inJournal of magnetism and magnetic materials Vol. 439; no. C; pp. 236 - 244
Main Authors Foley, Andrew, Corbett, Joseph, Khan, Alam, Richard, Andrea L., Ingram, David C., Smith, Arthur R., Zhao, Lianshui, Gallagher, James C., Yang, Fengyuan
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.10.2017
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Abstract •All significant components of perpendicular magnetic anisotropy are accounted for in ε-Mn4N thin films.•The scaling factor between tetragonal strain in ε-Mn4N and the strain component of anisotropy is quantified.•The most significant component is a large out-of-plane shape component attributed to a dipole-dipole interaction. Single phase ε-Mn4N thin and ultrathin films are grown on MgO(001) using molecular beam epitaxy. Reflection high-energy electron diffraction and out-of-plane X-ray diffraction measurements are taken for each sample in order to determine the in- and out-of-plane strain for each sample. Vibrating sample magnetometry and superconducting quantum interference device measurements, which are performed on the thin and ultrathin films respectively, are used to plot the magnetization of each sample versus both in- and out-of-planeH→-fields and to determine the magnitude of perpendicular magnetic anisotropy in these films. Three significant components of perpendicular magnetic anisotropy are observed in these films and are attributed to sample strain (1 component) and shape (2 components). Among these components, the most significant component 0.8–4.9Mergcm3 is identified as a second term of shape anisotropy, which possesses a negative linear relationship with sample thickness over the range from 9nm to 310nm. Atomic (magnetic) force microscopy measurements show the presence of a surface localized magnetic polarization (22–82%), which increases with decreasing thickness, when the net magnetizations of the films are zero. The second term of shape anisotropy as well as the surface localized polarization, which each depend on sample thickness, are each regarded as a consequence of Ising domains overlapping out-of-plane in these films.
AbstractList Single phase ε-Mn4N thin and ultrathin films are grown on MgO(001) using molecular beam epitaxy. Reflection high-energy electron diffraction and out-of-plane X-ray diffraction measurements are taken for each sample in order to determine the in- and out-of-plane strain for each sample. Vibrating sample magnetometry and superconducting quantum interference device measurements, which are performed on the thin and ultrathin films respectively, are used to plot the magnetization of each sample versus both in- and out-of-plane ... -fields and to determine the magnitude of perpendicular magnetic anisotropy in these films. Three significant components of perpendicular magnetic anisotropy are observed in these films and are attributed to sample strain (1 component) and shape (2 components). Among these components, the most significant component (0.8-4.9 ...) is identified as a second term of shape anisotropy, which possesses a negative linear relationship with sample thickness over the range from 9 nm to 310 nm. Atomic (magnetic) force microscopy measurements show the presence of a surface localized magnetic polarization (22-82%), which increases with decreasing thickness, when the net magnetizations of the films are zero. The second term of shape anisotropy as well as the surface localized polarization, which each depend on sample thickness, are each regarded as a consequence of Ising domains overlapping out-of-plane in these films.
•All significant components of perpendicular magnetic anisotropy are accounted for in ε-Mn4N thin films.•The scaling factor between tetragonal strain in ε-Mn4N and the strain component of anisotropy is quantified.•The most significant component is a large out-of-plane shape component attributed to a dipole-dipole interaction. Single phase ε-Mn4N thin and ultrathin films are grown on MgO(001) using molecular beam epitaxy. Reflection high-energy electron diffraction and out-of-plane X-ray diffraction measurements are taken for each sample in order to determine the in- and out-of-plane strain for each sample. Vibrating sample magnetometry and superconducting quantum interference device measurements, which are performed on the thin and ultrathin films respectively, are used to plot the magnetization of each sample versus both in- and out-of-planeH→-fields and to determine the magnitude of perpendicular magnetic anisotropy in these films. Three significant components of perpendicular magnetic anisotropy are observed in these films and are attributed to sample strain (1 component) and shape (2 components). Among these components, the most significant component 0.8–4.9Mergcm3 is identified as a second term of shape anisotropy, which possesses a negative linear relationship with sample thickness over the range from 9nm to 310nm. Atomic (magnetic) force microscopy measurements show the presence of a surface localized magnetic polarization (22–82%), which increases with decreasing thickness, when the net magnetizations of the films are zero. The second term of shape anisotropy as well as the surface localized polarization, which each depend on sample thickness, are each regarded as a consequence of Ising domains overlapping out-of-plane in these films.
Author Yang, Fengyuan
Foley, Andrew
Corbett, Joseph
Gallagher, James C.
Ingram, David C.
Smith, Arthur R.
Zhao, Lianshui
Richard, Andrea L.
Khan, Alam
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BackLink https://www.osti.gov/biblio/1414497$$D View this record in Osti.gov
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Keywords Molecular beam epitaxy
Perpendicular magnetic anisotropy
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Manganese anti-perovskite
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Snippet •All significant components of perpendicular magnetic anisotropy are accounted for in ε-Mn4N thin films.•The scaling factor between tetragonal strain in ε-Mn4N...
Single phase ε-Mn4N thin and ultrathin films are grown on MgO(001) using molecular beam epitaxy. Reflection high-energy electron diffraction and out-of-plane...
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SubjectTerms Electron diffraction
Epitaxial growth
Ising model
Magnesium oxide
Magnetic anisotropy
Magnetic force microscopy
Magnetic thin films
Manganese anti-perovskite
Molecular beam epitaxy
Perpendicular magnetic anisotropy
Plane strain
Polarization
Superconductivity
Thin films
Title Contribution from Ising domains overlapping out-of-plane to perpendicular magnetic anisotropy in Mn4N thin films on MgO(001)
URI https://dx.doi.org/10.1016/j.jmmm.2017.03.079
https://www.proquest.com/docview/1939227235
https://www.osti.gov/biblio/1414497
Volume 439
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