A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology
This paper presents a compact low-power 4 × 10 Gb/s quad-driver module for vertical-cavity surface-emitting laser (VCSEL) arrays in a 65-nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to four channels. To increase the bandwidth of the...
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| Published in | IEEE transactions on nuclear science Vol. 64; no. 6; pp. 1599 - 1604 |
|---|---|
| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
New York
IEEE
01.06.2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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| Abstract | This paper presents a compact low-power 4 × 10 Gb/s quad-driver module for vertical-cavity surface-emitting laser (VCSEL) arrays in a 65-nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to four channels. To increase the bandwidth of the driver, an internal feed-forward path is added for pole-zero cancellation, without increasing the power consumption. An edge-configurable pre-emphasis technique is adopted to achieve high bandwidth and minimize the asymmetry of the fall and rise times of the driver output current. Measurement results demonstrate an rms jitter of 0.68 ps for 10 Gb/s operation. Tests demonstrate negligible crosstalk between channels. Under irradiation, the modulation amplitude degrades less than 5% up to 300-Mrad ionizing dose. The area of the quad-driver array is 500 μm by 1000 μm, and the total power consumption for the entire driver array chip is 130 mW for typical current setting. |
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| AbstractList | This paper presents a compact low-power 4 × 10 Gb/s quad-driver module for vertical-cavity surface-emitting laser (VCSEL) arrays in a 65-nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to four channels. To increase the bandwidth of the driver, an internal feed-forward path is added for pole-zero cancellation, without increasing the power consumption. An edge-configurable pre-emphasis technique is adopted to achieve high bandwidth and minimize the asymmetry of the fall and rise times of the driver output current. Measurement results demonstrate an rms jitter of 0.68 ps for 10 Gb/s operation. Tests demonstrate negligible crosstalk between channels. Under irradiation, the modulation amplitude degrades less than 5% up to 300-Mrad ionizing dose. The area of the quad-driver array is 500 μm by 1000 μm, and the total power consumption for the entire driver array chip is 130 mW for typical current setting. This article presents a compact low-power 4 x 10 Gb/s quad-driver module for Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays in a 65 nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to 4 channels. To increase the bandwidth of the driver, an internal feed-forward path is added for pole-zero cancellation, without increasing the power consumption. An edge-configurable pre-emphasis technique is proposed to achieve high bandwidth and minimize the asymmetry of the fall and rise times of the driver output current. Measurement results demonstrate a RMS jitter of 0.68 ps for 10 Gb/s operation. Tests demonstrate negligible crosstalk between channels. Under irradiation, the modulation amplitude degrades less than 5% up to 300 Mrad ionizing dose. Finally, the area of the quaddriver array is 500 μm by 1000 μm and the total power consumption for the entire driver array chip is 130 mW for the typical current setting. |
| Author | Gui, Ping Kulis, Szymon Zeng, Zhiyao Sun, Kexu Moreira, Paulo Wang, Guanhua Zhang, Tao |
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| Cites_doi | 10.1109/JSSC.1973.1050430 10.1109/49.887904 10.1088/1748-0221/8/01/C01033 10.1088/1748-0221/7/01/P01015 10.1088/1748-0221/7/01/C01075 10.1109/TVLSI.2015.2507438 10.1109/MWSYM.2012.6259501 |
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| References | kucharski (ref12) 2005 razavi (ref13) 2002 (ref15) 2016 watanabe (ref3) 2009 ref11 shibata (ref18) 2015 (ref10) 2008 ref2 zhang (ref19) 2012 ref1 huang (ref14) 2014 ref17 ref7 wang (ref20) 2015 (ref16) 2013 ref6 ref5 (ref9) 2012 tsunoda (ref4) 2014 (ref8) 2007 yazaki (ref21) 2014 |
| References_xml | – ident: ref11 doi: 10.1109/JSSC.1973.1050430 – year: 2012 ident: ref9 publication-title: 850 nm 10 Gb/s VCSEL TOSA – year: 2013 ident: ref16 publication-title: Philips GmbH U-L-M Photonics High Speed VCSELs & Photodiodes – start-page: 1 year: 2015 ident: ref18 article-title: A 26-Gb/s 1.80-pJ/b CMOS-driven transmitter for 850-nm common-cathode VCSELs publication-title: Proc Opt Fiber Commun Conf contributor: fullname: shibata – ident: ref1 doi: 10.1109/49.887904 – start-page: 106 year: 2009 ident: ref3 article-title: CMOS optical 4-PAM VCSEL driver with modal-dispersion equalizer for 10 Gb/s 500 m MMF transmission publication-title: IEEE Int Solid-State Circuits Conf Dig Tech Papers contributor: fullname: watanabe – ident: ref6 doi: 10.1088/1748-0221/8/01/C01033 – ident: ref17 doi: 10.1088/1748-0221/7/01/P01015 – year: 2002 ident: ref13 publication-title: Design of Integrated Circuits for Optical Communications contributor: fullname: razavi – year: 2016 ident: ref15 publication-title: Using Clock Jitter Analysis to Reduce Ber in Serial Data Applications – ident: ref7 doi: 10.1088/1748-0221/7/01/C01075 – ident: ref2 doi: 10.1109/TVLSI.2015.2507438 – ident: ref5 doi: 10.1109/MWSYM.2012.6259501 – start-page: 154 year: 2014 ident: ref4 article-title: A 40 Gb/s VCSEL over-driving IC with group-delay-tunable pre-emphasis for optical interconnection publication-title: IEEE Int Solid-State Circuits Conf Dig Tech Papers contributor: fullname: tsunoda – year: 2007 ident: ref8 publication-title: Designing With the AOC 10 Gbps TOSA and ROSA – start-page: 144 year: 2014 ident: ref14 article-title: 8.4 A 28 Gb/s 1 pJ/b shared-inductor optical receiver with 56% chip-area reduction in 28nm CMOS publication-title: IEEE Int Solid-State Circuits Conf Dig Tech Papers contributor: fullname: huang – start-page: 1 year: 2012 ident: ref19 article-title: Design of lower power $4\times 10$ Gb/s VCSEL driver array publication-title: Proc IEEE MTT-S Int Microw Workshop Ser Millim Wave Wireless Technol Appl contributor: fullname: zhang – start-page: 111 year: 2015 ident: ref20 article-title: $4\times 30$ Gbps 155 mW/channel VCSEL driver in 65 nm CMOS publication-title: IEEE Optical Interconnects Conf (OI) contributor: fullname: wang – year: 2008 ident: ref10 publication-title: MAX3735A Laser Driver Output Configurations Part 4 Driving VCSELs – start-page: 222 year: 2005 ident: ref12 article-title: A 20 Gb/s VCSEL driver with pre-emphasis and regulated output impedance in 0.13 $\mu \text{m}$ CMOS publication-title: IEEE Int Solid-State Circuits Conf Dig Tech Papers contributor: fullname: kucharski – start-page: 2692 year: 2014 ident: ref21 article-title: 25-Gbps $\times 4$ optical transmitter with adjustable asymmetric pre-emphasis in 65-nm CMOS publication-title: Proc IEEE Int Symp Circuits Syst contributor: fullname: yazaki |
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| Snippet | This paper presents a compact low-power 4 × 10 Gb/s quad-driver module for vertical-cavity surface-emitting laser (VCSEL) arrays in a 65-nm CMOS technology.... This article presents a compact low-power 4 x 10 Gb/s quad-driver module for Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays in a 65 nm CMOS technology.... |
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| SubjectTerms | Bandwidth Bandwidths Channels CMOS Crosstalk High-speed data link INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY Irradiation Jitter Laser arrays laser driver array Limiting Modulation Power consumption POWER TRANSMISSION AND DISTRIBUTION Switches Technology Vertical cavity surface emission lasers Vertical cavity surface emitting lasers vertical-cavity surface-emitting laser (VCSEL) Vibration Wire |
| Title | A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology |
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