Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
ABSTRACT Triple‐junction solar cells from III–V compound semiconductors have thus far delivered the highest solar‐electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap ener...
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| Published in | Progress in photovoltaics Vol. 22; no. 3; pp. 277 - 282 |
|---|---|
| Main Authors | , , , , , , , , , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Bognor Regis
Blackwell Publishing Ltd
01.03.2014
Wiley Wiley Subscription Services, Inc |
| Subjects | |
| Online Access | Get full text |
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| Abstract | ABSTRACT
Triple‐junction solar cells from III–V compound semiconductors have thus far delivered the highest solar‐electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap energies turn out to be even more importance than the number of junctions. Several four‐junction solar cell architectures with optimum bandgap combination are found for lattice‐mismatched III–V semiconductors as high bandgap materials predominantly possess smaller lattice constant than low bandgap materials. Direct wafer bonding offers a new opportunity to combine such mismatched materials through a permanent, electrically conductive and optically transparent interface. In this work, a GaAs‐based top tandem solar cell structure was bonded to an InP‐based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four‐junction solar cell with a new record efficiency of 44.7% at 297‐times concentration of the AM1.5d (ASTM G173‐03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III–V multi‐junction solar cells having four and in the future even more junctions. Copyright © 2014 John Wiley & Sons, Ltd.
In this work, a GaAs‐based top tandem solar cell structure was bonded to an InP‐based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four‐junction solar cell with a new record efficiency of 44.7% at 297‐times concentration of the AM1.5d (ASTM G173‐03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III‐V multi‐junction solar cells having four and in the future even more junctions. |
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| AbstractList | ABSTRACT
Triple‐junction solar cells from III–V compound semiconductors have thus far delivered the highest solar‐electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap energies turn out to be even more importance than the number of junctions. Several four‐junction solar cell architectures with optimum bandgap combination are found for lattice‐mismatched III–V semiconductors as high bandgap materials predominantly possess smaller lattice constant than low bandgap materials. Direct wafer bonding offers a new opportunity to combine such mismatched materials through a permanent, electrically conductive and optically transparent interface. In this work, a GaAs‐based top tandem solar cell structure was bonded to an InP‐based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four‐junction solar cell with a new record efficiency of 44.7% at 297‐times concentration of the AM1.5d (ASTM G173‐03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III–V multi‐junction solar cells having four and in the future even more junctions. Copyright © 2014 John Wiley & Sons, Ltd. Triple-junction solar cells from III-V compound semiconductors have thus far delivered the highest solar-electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap energies turn out to be even more importance than the number of junctions. Several four-junction solar cell architectures with optimum bandgap combination are found for lattice-mismatched III-V semiconductors as high bandgap materials predominantly possess smaller lattice constant than low bandgap materials. Direct wafer bonding offers a new opportunity to combine such mismatched materials through a permanent, electrically conductive and optically transparent interface. In this work, a GaAs-based top tandem solar cell structure was bonded to an InP-based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four-junction solar cell with a new record efficiency of 44.7% at 297-times concentration of the AM1.5d (ASTM G173-03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III-V multi-junction solar cells having four and in the future even more junctions. Copyright © 2014 John Wiley & Sons, Ltd. [PUBLICATION ABSTRACT] ABSTRACT Triple‐junction solar cells from III–V compound semiconductors have thus far delivered the highest solar‐electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap energies turn out to be even more importance than the number of junctions. Several four‐junction solar cell architectures with optimum bandgap combination are found for lattice‐mismatched III–V semiconductors as high bandgap materials predominantly possess smaller lattice constant than low bandgap materials. Direct wafer bonding offers a new opportunity to combine such mismatched materials through a permanent, electrically conductive and optically transparent interface. In this work, a GaAs‐based top tandem solar cell structure was bonded to an InP‐based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four‐junction solar cell with a new record efficiency of 44.7% at 297‐times concentration of the AM1.5d (ASTM G173‐03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III–V multi‐junction solar cells having four and in the future even more junctions. Copyright © 2014 John Wiley & Sons, Ltd. In this work, a GaAs‐based top tandem solar cell structure was bonded to an InP‐based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four‐junction solar cell with a new record efficiency of 44.7% at 297‐times concentration of the AM1.5d (ASTM G173‐03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III‐V multi‐junction solar cells having four and in the future even more junctions. Triple-junction solar cells from III-V compound semiconductors have thus far delivered the highest solar-electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap energies turn out to be even more importance than the number of junctions. Several four-junction solar cell architectures with optimum bandgap combination are found for lattice-mismatched III-V semiconductors as high bandgap materials predominantly possess smaller lattice constant than low bandgap materials. Direct wafer bonding offers a new opportunity to combine such mismatched materials through a permanent, electrically conductive and optically transparent interface. In this work, a GaAs-based top tandem solar cell structure was bonded to an InP-based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four-junction solar cell with a new record efficiency of 44.7% at 297-times concentration of the AM1.5d (ASTM G173-03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III-V multi-junction solar cells having four and in the future even more junctions. Copyright copyright 2014 John Wiley & Sons, Ltd. In this work, a GaAs-based top tandem solar cell structure was bonded to an InP-based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four-junction solar cell with a new record efficiency of 44.7% at 297-times concentration of the AM1.5d (ASTM G173-03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III-V multi-junction solar cells having four and in the future even more junctions. |
| Author | Schachtner, Michael Schwarzburg, Klaus Hannappel, Thomas Bett, Andreas W. Blanc, Nicolas Guiot, Eric Grave, Matthias Beutel, Paul Siefer, Gerald Ghyselen, Bruno Drazek, Charlotte Oliva, Eduard Dobrich, Anja Krause, Rainer Signamarcheix, Thomas Tibbits, Thomas N. D. Wekkeli, Alexander Piccin, Matteo Dimroth, Frank Tauzin, Aurélie Karcher, Christian Salvetat, Thierry Fiedeler, Ulrich |
| Author_xml | – sequence: 1 givenname: Frank surname: Dimroth fullname: Dimroth, Frank email: Correspondence: Frank Dimroth, Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg, Germany., frank.dimroth@ise.fraunhofer.de organization: Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110, Freiburg, Germany – sequence: 2 givenname: Matthias surname: Grave fullname: Grave, Matthias organization: Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110, Freiburg, Germany – sequence: 3 givenname: Paul surname: Beutel fullname: Beutel, Paul organization: Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110, Freiburg, Germany – sequence: 4 givenname: Ulrich surname: Fiedeler fullname: Fiedeler, Ulrich organization: Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110, Freiburg, Germany – sequence: 5 givenname: Christian surname: Karcher fullname: Karcher, Christian organization: Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110, Freiburg, Germany – sequence: 6 givenname: Thomas N. D. surname: Tibbits fullname: Tibbits, Thomas N. D. organization: Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110, Freiburg, Germany – sequence: 7 givenname: Eduard surname: Oliva fullname: Oliva, Eduard organization: Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110, Freiburg, Germany – sequence: 8 givenname: Gerald surname: Siefer fullname: Siefer, Gerald organization: Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110, Freiburg, Germany – sequence: 9 givenname: Michael surname: Schachtner fullname: Schachtner, Michael organization: Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110, Freiburg, Germany – sequence: 10 givenname: Alexander surname: Wekkeli fullname: Wekkeli, Alexander organization: Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110, Freiburg, Germany – sequence: 11 givenname: Andreas W. surname: Bett fullname: Bett, Andreas W. organization: Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110, Freiburg, Germany – sequence: 12 givenname: Rainer surname: Krause fullname: Krause, Rainer organization: SOITEC S.A., Parc Technologique des Fontaines, 38190, Bernin, France – sequence: 13 givenname: Matteo surname: Piccin fullname: Piccin, Matteo organization: SOITEC S.A., Parc Technologique des Fontaines, 38190, Bernin, France – sequence: 14 givenname: Nicolas surname: Blanc fullname: Blanc, Nicolas organization: SOITEC S.A., Parc Technologique des Fontaines, 38190, Bernin, France – sequence: 15 givenname: Charlotte surname: Drazek fullname: Drazek, Charlotte organization: SOITEC S.A., Parc Technologique des Fontaines, 38190, Bernin, France – sequence: 16 givenname: Eric surname: Guiot fullname: Guiot, Eric organization: SOITEC S.A., Parc Technologique des Fontaines, 38190, Bernin, France – sequence: 17 givenname: Bruno surname: Ghyselen fullname: Ghyselen, Bruno organization: SOITEC S.A., Parc Technologique des Fontaines, 38190, Bernin, France – sequence: 18 givenname: Thierry surname: Salvetat fullname: Salvetat, Thierry organization: CEA LETI MINATEC campus, 17 rue des Martyrs, 38054, Grenoble, France – sequence: 19 givenname: Aurélie surname: Tauzin fullname: Tauzin, Aurélie organization: CEA LETI MINATEC campus, 17 rue des Martyrs, 38054, Grenoble, France – sequence: 20 givenname: Thomas surname: Signamarcheix fullname: Signamarcheix, Thomas organization: CEA LETI MINATEC campus, 17 rue des Martyrs, 38054, Grenoble, France – sequence: 21 givenname: Anja surname: Dobrich fullname: Dobrich, Anja organization: Helmholtz-Zentrum Berlin HZB, Hahn-Meitner-Platz 1, 14109, Berlin, Germany – sequence: 22 givenname: Thomas surname: Hannappel fullname: Hannappel, Thomas organization: Helmholtz-Zentrum Berlin HZB, Hahn-Meitner-Platz 1, 14109, Berlin, Germany – sequence: 23 givenname: Klaus surname: Schwarzburg fullname: Schwarzburg, Klaus organization: Helmholtz-Zentrum Berlin HZB, Hahn-Meitner-Platz 1, 14109, Berlin, Germany |
| BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28175101$$DView record in Pascal Francis |
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| Cites_doi | 10.1063/1.3658282 10.1109/PVSC.2011.6186332 10.1063/1.4822190 10.1063/1.2988497 10.1016/j.solmat.2008.07.014 10.1109/JPHOTOV.2013.2273097 10.1002/pip.407 10.1002/pip.2404 10.1146/annurev.matsci.28.1.215 10.1103/PhysRevB.76.085303 10.1002/pip.1255 10.1016/j.jcrysgro.2009.10.059 10.1063/1.4753823 10.1002/pip.514 10.1063/1.3601472 10.1109/JPHOTOV.2011.2180893 |
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| Keywords | Tandem solar cell Ternary compound Performance evaluation Binary compound Conversion rate Gallium phosphide Mismatching III-V compound Indium phosphide Wafer bonding Direct method Multijunction solar cells concentrator cells Concentrator solar cells III―V semiconductors multi-junction solar cells Wafer |
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| PublicationTitle | Progress in photovoltaics |
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Triple‐junction solar cells from III–V compound semiconductors have thus far delivered the highest solar‐electric conversion efficiencies. Increasing... Triple-junction solar cells from III-V compound semiconductors have thus far delivered the highest solar-electric conversion efficiencies. Increasing the... |
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| SubjectTerms | Applied sciences Bonding concentrator cells Conversion Energy Exact sciences and technology Gallium arsenide III-V semiconductors Lattice parameters Materials selection multi-junction solar cells Natural energy Photovoltaic cells Photovoltaic conversion Semiconductors Solar cells Solar cells. Photoelectrochemical cells Solar energy wafer bonding |
| Title | Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency |
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