Recent developments on high Curie temperature PIN–PMN–PT ferroelectric crystals
Pb(In0.5Nb0.5)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (>30°C) and coercive fields (∼5kV/cm), meanwhile maintaining similar electromechanical couplings (k33>90%) and piezoele...
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Published in | Journal of crystal growth Vol. 318; no. 1; pp. 846 - 850 |
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Main Authors | , , , , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
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Elsevier B.V
01.03.2011
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Abstract | Pb(In0.5Nb0.5)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (>30°C) and coercive fields (∼5kV/cm), meanwhile maintaining similar electromechanical couplings (k33>90%) and piezoelectric coefficients (d33∼1500pC/N), when compared to their binary counterpart Pb(Mg1/3Nb2/3)O3–PbTiO3. In this article, we reviewed recent developments on the PIN–PMN–PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as functions of temperature and dc bias. Mechanical quality factor Q was studied as a function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d33, was found to be improved when compared to the binary system, exhibiting the potential usage of PIN–PMN–PT in high power application. Furthermore, PIN–PMN–PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1μm. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper. |
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AbstractList | Pb(In sub(0.5Nb) sub(0).5)O sub(3-Pb(Mg) sub(1)/3Nb sub(2/3)O) sub(3)-PbTiO[ sub]3 (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (>30 [deg]C) and coercive fields (5 kV/cm), meanwhile maintaining similar electromechanical couplings (k sub(33>90%) and piezoelectric coefficients (d) sub(3)3[inline image]1500 pC/N), when compared to their binary counterpart Pb(Mg sub(1/3Nb) sub(2)/3)O sub(3-PbTiO) sub(3). In this article, we reviewed recent developments on the PIN-PMN-PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as functions of temperature and dc bias. Mechanical quality factor Q was studied as a function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d sub(33, was found to be improved when compared to the binary system, exhibiting the potential usage of PIN-PMN-PT in high power application. Furthermore, PIN-PMN-PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1 [micro]m. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper.) Pb(In(0.5)Nb(0.5))O(3)-Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (> 30°C) and coercive fields (~5kV/cm), meanwhile maintaining similar electromechanical couplings (k(33)> 90%) and piezoelectric coefficients (d(33)~1500pC/N), when compared to their binary counterpart Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3). In this article, we reviewed recent developments on the PIN-PMN-PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as function of temperature and dc bias. Mechanical quality factor Q was studied as function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d(33), was found to be improved when compared to binary system, exhibiting the potential usage of PIN-PMN-PT in high power application. Furthermore, PIN-PMN-PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1μm. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper. Pb(In 0.5 Nb 0.5 )O 3 -Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (> 30°C) and coercive fields (~5kV/cm), meanwhile maintaining similar electromechanical couplings (k 33 > 90%) and piezoelectric coefficients (d 33 ~1500pC/N), when compared to their binary counterpart Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 . In this article, we reviewed recent developments on the PIN-PMN-PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as function of temperature and dc bias. Mechanical quality factor Q was studied as function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d 33 , was found to be improved when compared to binary system, exhibiting the potential usage of PIN-PMN-PT in high power application. Furthermore, PIN-PMN-PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1μm. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper. Pb(In0.5Nb0.5)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (>30°C) and coercive fields (∼5kV/cm), meanwhile maintaining similar electromechanical couplings (k33>90%) and piezoelectric coefficients (d33∼1500pC/N), when compared to their binary counterpart Pb(Mg1/3Nb2/3)O3–PbTiO3. In this article, we reviewed recent developments on the PIN–PMN–PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as functions of temperature and dc bias. Mechanical quality factor Q was studied as a function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d33, was found to be improved when compared to the binary system, exhibiting the potential usage of PIN–PMN–PT in high power application. Furthermore, PIN–PMN–PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1μm. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper. |
Author | Luo, Jun Shrout, Thomas R. Sherlock, Nevin P. Jae Lee, Hyeong Zhang, Shujun Li, Fei Xia, Ru Hackenberger, Wesley Meyer, Richard J. |
AuthorAffiliation | 1 Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, US 2 Applied Research Laboratory, Pennsylvania State University, University Park, PA, 16802, US 3 TRS Technologies Inc., 2820 East College Avenue, State College, PA, 16801, US 4 Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, P. R. China |
AuthorAffiliation_xml | – name: 1 Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, US – name: 4 Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, P. R. China – name: 2 Applied Research Laboratory, Pennsylvania State University, University Park, PA, 16802, US – name: 3 TRS Technologies Inc., 2820 East College Avenue, State College, PA, 16801, US |
Author_xml | – sequence: 1 givenname: Shujun surname: Zhang fullname: Zhang, Shujun email: soz1@psu.edu organization: Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA – sequence: 2 givenname: Fei surname: Li fullname: Li, Fei organization: Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA – sequence: 3 givenname: Nevin P. surname: Sherlock fullname: Sherlock, Nevin P. organization: Applied Research Laboratory, Pennsylvania State University, University Park, PA 16802, USA – sequence: 4 givenname: Jun surname: Luo fullname: Luo, Jun organization: TRS Technologies Inc., 2820 East College Avenue, State College, PA 16801, USA – sequence: 5 givenname: Hyeong surname: Jae Lee fullname: Jae Lee, Hyeong organization: Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA – sequence: 6 givenname: Ru surname: Xia fullname: Xia, Ru organization: Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA – sequence: 7 givenname: Richard J. surname: Meyer fullname: Meyer, Richard J. organization: Applied Research Laboratory, Pennsylvania State University, University Park, PA 16802, USA – sequence: 8 givenname: Wesley surname: Hackenberger fullname: Hackenberger, Wesley organization: TRS Technologies Inc., 2820 East College Avenue, State College, PA 16801, USA – sequence: 9 givenname: Thomas R. surname: Shrout fullname: Shrout, Thomas R. organization: Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA |
BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24025577$$DView record in Pascal Francis https://www.ncbi.nlm.nih.gov/pubmed/21516190$$D View this record in MEDLINE/PubMed |
BookMark | eNqFkc1u1DAQxy3Uim4Lr1DlguCSxd9xLgi04qNSCxWUs-V1xrteJfHWTlbqjXfgDXkSHHZb4AKXmdH4N6P_-H-KjvrQA0LnBM8JJvLlZr6x8S6tYphTPDXJHHP2CM2IqlgpMKZHaJYjLTHl6gSdprTBOE8S_BidUCJyVeMZ-vIZLPRD0cAO2rDtcp2K0Bdrv1oXizF6KAbothDNMEYori8-_vj2_frqV7wpHMQYoAU7RG-LSdBg2vQEHbuc4Okhn6Gv797eLD6Ul5_eXyzeXJaWSzaUSgpBnGgMp0y6pQFbN0tQCoi1snFG1NLkY4iohWGNZdbVjtmqqYkQVHDHztCr_d7tuOygme6IptXb6DsT73QwXv_90vu1XoWdZriqKSd5wfPDghhuR0iD7nyy0LamhzAmrVTNWRY5kS_-SRJFJZEVFyqjco_aGFKK4B4EEawn7_RG33unJ-80ITp7lwfP_zznYezerAw8OwAmWdO6aHrr02-OYypEVWXu9Z6D_Pk7D1En66G30PiYrdJN8P_T8hPfw8Cu |
CODEN | JCRGAE |
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ContentType | Journal Article Conference Proceeding |
Copyright | 2010 Elsevier B.V. 2015 INIST-CNRS |
Copyright_xml | – notice: 2010 Elsevier B.V. – notice: 2015 INIST-CNRS |
DBID | IQODW NPM AAYXX CITATION 7X8 7SR 7U5 8BQ 8FD JG9 L7M 5PM |
DOI | 10.1016/j.jcrysgro.2010.11.043 |
DatabaseName | Pascal-Francis PubMed CrossRef MEDLINE - Academic Engineered Materials Abstracts Solid State and Superconductivity Abstracts METADEX Technology Research Database Materials Research Database Advanced Technologies Database with Aerospace PubMed Central (Full Participant titles) |
DatabaseTitle | PubMed CrossRef MEDLINE - Academic Materials Research Database Engineered Materials Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace METADEX |
DatabaseTitleList | Materials Research Database PubMed MEDLINE - Academic |
Database_xml | – sequence: 1 dbid: NPM name: PubMed url: https://proxy.k.utb.cz/login?url=http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed sourceTypes: Index Database |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Chemistry Physics |
EISSN | 1873-5002 |
EndPage | 850 |
ExternalDocumentID | 10_1016_j_jcrysgro_2010_11_043 21516190 24025577 S0022024810010237 |
Genre | Journal Article |
GrantInformation_xml | – fundername: NIBIB NIH HHS grantid: P41 EB002182 – fundername: NIBIB NIH HHS grantid: P41 EB002182-11 |
GroupedDBID | --K --M -~X .~1 0R~ 1B1 1RT 1~. 1~5 4.4 457 4G. 53G 5GY 5VS 7-5 71M 8P~ 9JN AABNK AACTN AAEDT AAEDW AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAXUO ABFNM ABJNI ABMAC ABNEU ABXDB ABYKQ ACDAQ ACFVG ACGFS ACIWK ACNNM ACRLP ADBBV ADEZE ADIYS ADMUD AEBSH AEKER AENEX AFKWA AFTJW AGHFR AGUBO AGYEJ AHHHB AIEXJ AIKHN AITUG AIVDX AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AXJTR BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EO8 EO9 EP2 EP3 F5P FDB FIRID FNPLU FYGXN G-Q GBLVA HZ~ IHE J1W KOM M24 M38 M41 MO0 N9A O-L O9- OAUVE OGIMB OZT P-8 P-9 P2P PC. Q38 RIG RNS ROL RPZ SDF SDG SDP SES SPC SPCBC SPD SSQ SSZ T5K TN5 XPP ZMT ~02 ~G- 08R 29K AAQXK ABPIF ABPTK AFFNX AI. ASPBG AVWKF AZFZN BBWZM D-I EJD FEDTE FGOYB G-2 HMV IQODW NDZJH R2- SEW SMS SPG VH1 WUQ AAXKI AKRWK NPM AAYXX ADVLN AFJKZ CITATION HVGLF 7X8 7SR 7U5 8BQ 8FD JG9 L7M 5PM |
ID | FETCH-LOGICAL-c463t-86551f5da4236fbaec9dbe88e1cc6dfa596a8731595a3dc3cf9f3c7d9155254f3 |
IEDL.DBID | AIKHN |
ISSN | 0022-0248 |
IngestDate | Tue Sep 17 21:21:35 EDT 2024 Fri Oct 25 01:46:54 EDT 2024 Sat Oct 26 05:59:40 EDT 2024 Thu Sep 26 17:23:41 EDT 2024 Sat Nov 02 11:57:21 EDT 2024 Sun Oct 22 16:07:23 EDT 2023 Fri Feb 23 02:28:51 EST 2024 |
IsDoiOpenAccess | false |
IsOpenAccess | true |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 1 |
Keywords | A1. Characterization B2. Ferroelectric materials B2. Piezoelectric materials Crystal growth Temperature dependence Curie point Lead titanates Binary systems Dynamic loads Monocrystals Reviews Ferroelectric materials Piezoelectric materials Quality factor Coercive force Size effect Lead magnesium niobates Manganese |
Language | English |
License | CC BY 4.0 |
LinkModel | DirectLink |
MeetingName | The 16th International Conference on Crystal Growth (ICCG16)/The 14th International Conference on Vapor Growth and Epitaxy (ICVGE14), 8-13 August 2010, Beijing, China |
MergedId | FETCHMERGED-LOGICAL-c463t-86551f5da4236fbaec9dbe88e1cc6dfa596a8731595a3dc3cf9f3c7d9155254f3 |
Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1 |
OpenAccessLink | https://europepmc.org/articles/pmc3079241?pdf=render |
PMID | 21516190 |
PQID | 1826167458 |
PQPubID | 23479 |
PageCount | 5 |
ParticipantIDs | pubmedcentral_primary_oai_pubmedcentral_nih_gov_3079241 proquest_miscellaneous_889435511 proquest_miscellaneous_1826167458 crossref_primary_10_1016_j_jcrysgro_2010_11_043 pubmed_primary_21516190 pascalfrancis_primary_24025577 elsevier_sciencedirect_doi_10_1016_j_jcrysgro_2010_11_043 |
PublicationCentury | 2000 |
PublicationDate | 2011-03-01 |
PublicationDateYYYYMMDD | 2011-03-01 |
PublicationDate_xml | – month: 03 year: 2011 text: 2011-03-01 day: 01 |
PublicationDecade | 2010 |
PublicationPlace | Amsterdam |
PublicationPlace_xml | – name: Amsterdam – name: Netherlands |
PublicationTitle | Journal of crystal growth |
PublicationTitleAlternate | J Cryst Growth |
PublicationYear | 2011 |
Publisher | Elsevier B.V Elsevier |
Publisher_xml | – name: Elsevier B.V – name: Elsevier |
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SSID | ssj0001610 |
Score | 2.3301775 |
Snippet | Pb(In0.5Nb0.5)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage... Pb(In(0.5)Nb(0.5))O(3)-Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their... Pb(In sub(0.5Nb) sub(0).5)O sub(3-Pb(Mg) sub(1)/3Nb sub(2/3)O) sub(3)-PbTiO[ sub]3 (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last... Pb(In 0.5 Nb 0.5 )O 3 -Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their... |
SourceID | pubmedcentral proquest crossref pubmed pascalfrancis elsevier |
SourceType | Open Access Repository Aggregation Database Index Database Publisher |
StartPage | 846 |
SubjectTerms | A1. Characterization B2. Ferroelectric materials B2. Piezoelectric materials Bridgman method Coercive force Condensed matter: electronic structure, electrical, magnetic, and optical properties Crystal growth Crystals Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Direct current Dynamical systems Exact sciences and technology Ferroelectric crystals Physics Piezoelectricity |
Title | Recent developments on high Curie temperature PIN–PMN–PT ferroelectric crystals |
URI | https://dx.doi.org/10.1016/j.jcrysgro.2010.11.043 https://www.ncbi.nlm.nih.gov/pubmed/21516190 https://search.proquest.com/docview/1826167458 https://search.proquest.com/docview/889435511 https://pubmed.ncbi.nlm.nih.gov/PMC3079241 |
Volume | 318 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LT9wwEB7BcihVhcqrpLQrI_UadhPHcXJEq6KliBUSIHGzHMcWu4fsah8HLoj_wD_kl3Qmj2W3KuqhlxwSO9F47PE38cw3AD94LkUoTeprgcst6mrpa66t73BVapHJOCoTaa8Gcf8u-nUv7jeg1-TCUFhlbfsrm15a6_pOpx7NzmQ4pBzfMCRGrqDkReNyE7ZwOwqTFmydXVz2B0uDjKCm25CGU4eVROHR6chMHymDooryIkLPiL-3R32a6BmOnKtKXvwNk_4ZWrmyV51_hp0aZLKzSo5d2LDFHnzoNbXd9uDjCg3hPtwgdsQXsfwtgGjGxgUjKmPWo5p2jBisavpldn0xeH1-ub4qr7fM2el0XFXTGRpGciKenx3A3fnP217fr4st-CaK-dynBNXAiVwjvopdpq1J88wmiQ2MiXOnRRrrRHJEP0Lz3HDjUseNzIlfHp1Mxw-hVYwLewTMWBfpCD2joOvokDlzUjiTJ0JnOrQm8KDTDK-aVJwaqgk2G6lGIYoUgg6KQoV4kDZaUGuzQ6Hh_2ff9pralp-kcyUhpPTgpNGjQjXQgYku7HgxU-R7UZaGSDxg77RJiMAehw6l-lKp_u0DiKbQP-16INcmxbIBUXuvPymGDyXFN1pedIyDr_8h9zFsV_-_KV7uG7Tm04X9jgBqnrVh8_QpaNfL5Dfsdh-m |
link.rule.ids | 230,310,311,315,783,787,792,793,888,4509,23942,23943,24128,25152,27936,27937,45597,45691 |
linkProvider | Elsevier |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LT-MwEB7xOMBqtVoeu2QfYCSuoU0dx8kRVYtaoBUSReJmOY4t2kNa9XHYG_9h_-H-kp3Jo7RoEQcuOSR2ovHY42_imW8AzngmRUuaxNcCl1vY1NLXXFvf4arUIpVRWCTS9vpR5z68ehAPG9Cuc2EorLKy_aVNL6x1dadRjWZjMhxSjm-rRYxcQcGLxuUmbCMaSHB1bl90rzv9pUFGUNOsScOpw0qi8Oh8ZKa_KYOijPIiQs-Qv7ZHfZzoGY6cK0te_A-TvgytXNmrLj_DpwpksotSjj3YsPk-7LTr2m778GGFhvAA7hA74otY9hxANGPjnBGVMWtTTTtGDFYV_TK77fb_Pv257RXXAXN2Oh2X1XSGhpGciOdnh3B_-WvQ7vhVsQXfhBGf-5SgGjiRacRXkUu1NUmW2ji2gTFR5rRIIh1LjuhHaJ4ZblziuJEZ8cujk-n4F9jKx7k9AmasC3WInlHQdHTInDopnMlioVPdsibwoFEPr5qUnBqqDjYbqVohihSCDopChXiQ1FpQa7NDoeF_s-_xmtqWn6RzJSGk9OC01qNCNdCBic7teDFT5HtRloaIPWCvtImJwB6HDqX6Wqr--QOIptA_bXog1ybFsgFRe68_yYePBcU3Wl50jINv75D7BHY6g96Nuun2r7_DbvkvnGLnfsDWfLqwPxFMzdPjarH8A91oIZo |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=proceeding&rft.title=Journal+of+crystal+growth&rft.atitle=Recent+developments+on+high+Curie+temperature+PIN-PMN-PT+ferroelectric+crystals&rft.au=SHUJUN+ZHANG&rft.au=FEI+LI&rft.au=SHERLOCK%2C+Nevin+P&rft.au=JUN+LUO&rft.date=2011-03-01&rft.pub=Elsevier&rft.issn=0022-0248&rft.eissn=1873-5002&rft.volume=318&rft.issue=1&rft.spage=846&rft.epage=850&rft_id=info:doi/10.1016%2Fj.jcrysgro.2010.11.043&rft.externalDBID=n%2Fa&rft.externalDocID=24025577 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0022-0248&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0022-0248&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0022-0248&client=summon |