Recent developments on high Curie temperature PIN–PMN–PT ferroelectric crystals

Pb(In0.5Nb0.5)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (>30°C) and coercive fields (∼5kV/cm), meanwhile maintaining similar electromechanical couplings (k33>90%) and piezoele...

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Published inJournal of crystal growth Vol. 318; no. 1; pp. 846 - 850
Main Authors Zhang, Shujun, Li, Fei, Sherlock, Nevin P., Luo, Jun, Jae Lee, Hyeong, Xia, Ru, Meyer, Richard J., Hackenberger, Wesley, Shrout, Thomas R.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.03.2011
Elsevier
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Abstract Pb(In0.5Nb0.5)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (>30°C) and coercive fields (∼5kV/cm), meanwhile maintaining similar electromechanical couplings (k33>90%) and piezoelectric coefficients (d33∼1500pC/N), when compared to their binary counterpart Pb(Mg1/3Nb2/3)O3–PbTiO3. In this article, we reviewed recent developments on the PIN–PMN–PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as functions of temperature and dc bias. Mechanical quality factor Q was studied as a function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d33, was found to be improved when compared to the binary system, exhibiting the potential usage of PIN–PMN–PT in high power application. Furthermore, PIN–PMN–PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1μm. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper.
AbstractList Pb(In sub(0.5Nb) sub(0).5)O sub(3-Pb(Mg) sub(1)/3Nb sub(2/3)O) sub(3)-PbTiO[ sub]3 (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (>30 [deg]C) and coercive fields (5 kV/cm), meanwhile maintaining similar electromechanical couplings (k sub(33>90%) and piezoelectric coefficients (d) sub(3)3[inline image]1500 pC/N), when compared to their binary counterpart Pb(Mg sub(1/3Nb) sub(2)/3)O sub(3-PbTiO) sub(3). In this article, we reviewed recent developments on the PIN-PMN-PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as functions of temperature and dc bias. Mechanical quality factor Q was studied as a function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d sub(33, was found to be improved when compared to the binary system, exhibiting the potential usage of PIN-PMN-PT in high power application. Furthermore, PIN-PMN-PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1 [micro]m. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper.)
Pb(In(0.5)Nb(0.5))O(3)-Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (> 30°C) and coercive fields (~5kV/cm), meanwhile maintaining similar electromechanical couplings (k(33)> 90%) and piezoelectric coefficients (d(33)~1500pC/N), when compared to their binary counterpart Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3). In this article, we reviewed recent developments on the PIN-PMN-PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as function of temperature and dc bias. Mechanical quality factor Q was studied as function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d(33), was found to be improved when compared to binary system, exhibiting the potential usage of PIN-PMN-PT in high power application. Furthermore, PIN-PMN-PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1μm. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper.
Pb(In 0.5 Nb 0.5 )O 3 -Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (> 30°C) and coercive fields (~5kV/cm), meanwhile maintaining similar electromechanical couplings (k 33 > 90%) and piezoelectric coefficients (d 33 ~1500pC/N), when compared to their binary counterpart Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 . In this article, we reviewed recent developments on the PIN-PMN-PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as function of temperature and dc bias. Mechanical quality factor Q was studied as function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d 33 , was found to be improved when compared to binary system, exhibiting the potential usage of PIN-PMN-PT in high power application. Furthermore, PIN-PMN-PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1μm. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper.
Pb(In0.5Nb0.5)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (>30°C) and coercive fields (∼5kV/cm), meanwhile maintaining similar electromechanical couplings (k33>90%) and piezoelectric coefficients (d33∼1500pC/N), when compared to their binary counterpart Pb(Mg1/3Nb2/3)O3–PbTiO3. In this article, we reviewed recent developments on the PIN–PMN–PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as functions of temperature and dc bias. Mechanical quality factor Q was studied as a function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d33, was found to be improved when compared to the binary system, exhibiting the potential usage of PIN–PMN–PT in high power application. Furthermore, PIN–PMN–PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1μm. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper.
Author Luo, Jun
Shrout, Thomas R.
Sherlock, Nevin P.
Jae Lee, Hyeong
Zhang, Shujun
Li, Fei
Xia, Ru
Hackenberger, Wesley
Meyer, Richard J.
AuthorAffiliation 1 Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, US
2 Applied Research Laboratory, Pennsylvania State University, University Park, PA, 16802, US
3 TRS Technologies Inc., 2820 East College Avenue, State College, PA, 16801, US
4 Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, P. R. China
AuthorAffiliation_xml – name: 1 Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, US
– name: 4 Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, P. R. China
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– name: 3 TRS Technologies Inc., 2820 East College Avenue, State College, PA, 16801, US
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Issue 1
Keywords A1. Characterization
B2. Ferroelectric materials
B2. Piezoelectric materials
Crystal growth
Temperature dependence
Curie point
Lead titanates
Binary systems
Dynamic loads
Monocrystals
Reviews
Ferroelectric materials
Piezoelectric materials
Quality factor
Coercive force
Size effect
Lead magnesium niobates
Manganese
Language English
License CC BY 4.0
LinkModel DirectLink
MeetingName The 16th International Conference on Crystal Growth (ICCG16)/The 14th International Conference on Vapor Growth and Epitaxy (ICVGE14), 8-13 August 2010, Beijing, China
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Snippet Pb(In0.5Nb0.5)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage...
Pb(In(0.5)Nb(0.5))O(3)-Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their...
Pb(In sub(0.5Nb) sub(0).5)O sub(3-Pb(Mg) sub(1)/3Nb sub(2/3)O) sub(3)-PbTiO[ sub]3 (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last...
Pb(In 0.5 Nb 0.5 )O 3 -Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their...
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SubjectTerms A1. Characterization
B2. Ferroelectric materials
B2. Piezoelectric materials
Bridgman method
Coercive force
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Crystal growth
Crystals
Dielectric, piezoelectric, ferroelectric and antiferroelectric materials
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Direct current
Dynamical systems
Exact sciences and technology
Ferroelectric crystals
Physics
Piezoelectricity
Title Recent developments on high Curie temperature PIN–PMN–PT ferroelectric crystals
URI https://dx.doi.org/10.1016/j.jcrysgro.2010.11.043
https://www.ncbi.nlm.nih.gov/pubmed/21516190
https://search.proquest.com/docview/1826167458
https://search.proquest.com/docview/889435511
https://pubmed.ncbi.nlm.nih.gov/PMC3079241
Volume 318
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