Pseudogap behavior in Pr0.5Sr0.5MnO3: A photoemission study

The valence band electronic structure of Pr0.5Sr0.5MnO3 has been investigated across its paramagnetic metallic (PMM)-ferromagnetic metallic (FMM)-antiferromagnetic insulator (AFMI) transition. Using surface sensitive high resolution photoemission we have conclusively demonstrated the presence of a p...

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Bibliographic Details
Published inSurface science Vol. 605; no. 9-10; pp. 875 - 877
Main Authors PAL, Prabir, DALAI, M. K, ULFAT, I
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier 01.05.2011
Subjects
Colossal magnetoresistance
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Electronic structure
Exact sciences and technology
Fysik
NATURAL SCIENCES
NATURVETENSKAP
Photoemission
Physical Sciences
Physics
Energy gap
Electronic structure
Colossal magnetoresistance
Magnetoresistance
Photoemission
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Summary:The valence band electronic structure of Pr0.5Sr0.5MnO3 has been investigated across its paramagnetic metallic (PMM)-ferromagnetic metallic (FMM)-antiferromagnetic insulator (AFMI) transition. Using surface sensitive high resolution photoemission we have conclusively demonstrated the presence of a pseudogap of magnitude 80 meV in the near Fermi level electronic spectrum in the PMM and FMM phases and finite intensity at the Fermi level in the charge ordering (CO)-AFMI phase. The pseudogap behavior is explained in terms of the strong electron-phonon interaction and the formation of Jahn Teller UT) polarons, indicating the charge localizations. The finite intensity at the Fermi level in the insulating phase showed a lack of charge ordering in the surface of the Pr0.5Sr0.5MnO3 samples.
ISSN:0039-6028
1879-2758
1879-2758
DOI:10.1016/j.susc.2011.01.031