Air-stability analysis and improvement of poly(3-hexylthiophene) field-effect transistors

• Published in: Semiconductor science and technology Vol. 24; no. 9; pp. 095013 - 095013 (5)
• Main Authors: Liu, Yurong, Wu, Liming, Lai, P T, Zuo, Qingyun
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.09.2009; Institute of Physics
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Water; Performance evaluation; Relative humidity; Oxygen; Doping; Active layer; Polymer; Stability criterion; Field effect transistor; Microelectronic fabrication; Thiophene derivative polymer; p type semiconductor; Top contact configuration; Photolithography; Passivation; Photoresist
• DOI: 10.1088/0268-1242/24/9/095013
• ISSN: 0268-1242

The influence of air, dry oxygen and humidity on the performance of a top-contact polymer field-effect transistor using poly(3-hexylthiophene) (P3HT) as an active layer is investigated. It is demonstrated that high relative humidity (92%) causes the device to degrade rapidly, while the influence of dry oxygen on the device is relatively small, indicating that the harmful influences are mainly the result of atmospheric water due to the enhancement of carrier conduction in the vicinity of the active-layer surface caused by the absorption of water molecules on the surface, rather than the p-type doping effect of O2. A photoresist or paraffin layer is utilized as a passivation layer on top of the P3HT film, and the effects of the passivation layer on the performance and stability of the device are investigated. Results indicate that the passivation layer can effectively improve the stability of the device exposed to air, and enhance its field-effect mobility.