Chemical effects on the tribological behavior during copper chemical mechanical planarization

• Published in: Materials chemistry and physics Vol. 153; pp. 48 - 53
• Main Authors: Li, Jing, Liu, Yuhong, Wang, Tongqing, Lu, Xinchun
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2015
• Subjects: Friction; Semiconductors; Surface properties; XPS; Surface properties; XPS; Friction; Semiconductors

Copper chemical mechanical polishing/planarization (CMP) is subject to mechanical actions by abrasive wear coupled with simultaneous chemical effects via slurries at the wafer/pad interface. Therefore, it is necessary to investigate slurry chemical effects on the contact interface. The chemical role...