Advanced photo-annealing of indium zinc oxide films for thin-film transistors using pulse UV light

An ultra-fast and simple method for forming high-performance metal oxide semiconductor by a solution process based on sol-gel condensation in ambient air using pulse ultraviolet-light annealing is proposed for the thin-film transistor (TFT) application. Even a small amount of light absorbance by the...

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Published inJournal of Information Display Vol. 17; no. 1; pp. 1 - 7
Main Authors Park, Sang Cheol, Kim, Dongwook, Shin, Hyunji, Lee, Do Kyoung, Zhang, Xue, Park, Jaehoon, Choi, Jong Sun
Format Journal Article
LanguageEnglish
Published Taylor & Francis 02.01.2016
한국정보디스플레이학회
Subjects
metal oxide semiconductor
pulse UV-light annealing
Thin-film transistor
전기공학
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ISSN1598-0316
2158-1606
DOI10.1080/15980316.2016.1149114

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Abstract An ultra-fast and simple method for forming high-performance metal oxide semiconductor by a solution process based on sol-gel condensation in ambient air using pulse ultraviolet-light annealing is proposed for the thin-film transistor (TFT) application. Even a small amount of light absorbance by the transparent metal oxide film provide sufficient energy to carry out sol-gel condensation because of the extremely high peak energy and broad irradiation spectrum of the xenon lamp used in this study. The fabricated indium zinc oxide TFTs had a field-effect mobility of 2.4 cm 2  V −1  s −1 , which is comparable to a device performance of 2.7 cm 2  V −1  s −1 obtained through thermal annealing.
AbstractList An ultra-fast and simple method for forming high-performance metal oxide semiconductor by a solution process based on sol–gel condensation in ambient air using pulse ultraviolet-light annealing is proposed for the thin-film transistor (TFT) application. Even a small amount of light absorbance by the transparent metal oxide film provide sufficient energy to carry out sol–gel condensation because of the extremely high peak energy and broad irradiation spectrum of the xenon lamp used in this study. The fabricated indium zinc oxide TFTs had a field-effect mobility of 2.4 cm2 V−1 s−1, which is comparable to a device performance of 2.7 cm2 V−1 s−1 obtained through thermal annealing. KCI Citation Count: 3
An ultra-fast and simple method for forming high-performance metal oxide semiconductor by a solution process based on sol-gel condensation in ambient air using pulse ultraviolet-light annealing is proposed for the thin-film transistor (TFT) application. Even a small amount of light absorbance by the transparent metal oxide film provide sufficient energy to carry out sol-gel condensation because of the extremely high peak energy and broad irradiation spectrum of the xenon lamp used in this study. The fabricated indium zinc oxide TFTs had a field-effect mobility of 2.4 cm 2  V −1  s −1 , which is comparable to a device performance of 2.7 cm 2  V −1  s −1 obtained through thermal annealing.
Author Park, Jaehoon
Kim, Dongwook
Zhang, Xue
Shin, Hyunji
Park, Sang Cheol
Lee, Do Kyoung
Choi, Jong Sun
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Snippet An ultra-fast and simple method for forming high-performance metal oxide semiconductor by a solution process based on sol-gel condensation in ambient air using...
An ultra-fast and simple method for forming high-performance metal oxide semiconductor by a solution process based on sol–gel condensation in ambient air using...
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SubjectTerms metal oxide semiconductor
pulse UV-light annealing
Thin-film transistor
전기공학
Title Advanced photo-annealing of indium zinc oxide films for thin-film transistors using pulse UV light
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