Advanced photo-annealing of indium zinc oxide films for thin-film transistors using pulse UV light

• Published in: Journal of Information Display Vol. 17; no. 1; pp. 1 - 7
• Main Authors: Park, Sang Cheol, Kim, Dongwook, Shin, Hyunji, Lee, Do Kyoung, Zhang, Xue, Park, Jaehoon, Choi, Jong Sun
• Format: Journal Article
• Language: English
• Published: Taylor & Francis 02.01.2016; 한국정보디스플레이학회
• Subjects: metal oxide semiconductor; pulse UV-light annealing; Thin-film transistor; 전기공학
• ISSN: 1598-0316; 2158-1606
• DOI: 10.1080/15980316.2016.1149114

An ultra-fast and simple method for forming high-performance metal oxide semiconductor by a solution process based on sol-gel condensation in ambient air using pulse ultraviolet-light annealing is proposed for the thin-film transistor (TFT) application. Even a small amount of light absorbance by the transparent metal oxide film provide sufficient energy to carry out sol-gel condensation because of the extremely high peak energy and broad irradiation spectrum of the xenon lamp used in this study. The fabricated indium zinc oxide TFTs had a field-effect mobility of 2.4 cm 2  V −1  s −1 , which is comparable to a device performance of 2.7 cm 2  V −1  s −1 obtained through thermal annealing.