Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

• Published in: Semiconductor science and technology Vol. 33; no. 1; pp. 13002 - 13033
• Main Authors: Noé, Pierre, Vallée, Christophe, Hippert, Françoise, Fillot, Frédéric, Raty, Jean-Yves
• Format: Journal Article Web Resource
• Language: English
• Published: IOP Publishing 01.01.2018; Institute of Physics (IoP)
• Subjects: ab initio; GST; memories; non-volatile memory; Phase change materials; Physical, chemical, mathematical & earth Sciences; Physics; Physique; Physique, chimie, mathématiques & sciences de la terre

Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, in non-volatile resistive memories. The latter, known as PCM memories or phase-change random access...