APA (7th ed.) Citation

Noé, P., Vallée, C., Hippert, F., Fillot, F., & Raty, J. (2018). Phase-change materials for non-volatile memory devices: From technological challenges to materials science issues. Semiconductor science and technology, 33(1), 13002-13033. https://doi.org/10.1088/1361-6641/aa7c25

Chicago Style (17th ed.) Citation

Noé, Pierre, Christophe Vallée, Françoise Hippert, Frédéric Fillot, and Jean-Yves Raty. "Phase-change Materials for Non-volatile Memory Devices: From Technological Challenges to Materials Science Issues." Semiconductor Science and Technology 33, no. 1 (2018): 13002-13033. https://doi.org/10.1088/1361-6641/aa7c25.

MLA (9th ed.) Citation

Noé, Pierre, et al. "Phase-change Materials for Non-volatile Memory Devices: From Technological Challenges to Materials Science Issues." Semiconductor Science and Technology, vol. 33, no. 1, 2018, pp. 13002-13033, https://doi.org/10.1088/1361-6641/aa7c25.