Dislocation core structures in (0001) InGaN

Threading dislocation core structures in c-plane GaN and In x Ga1− x N (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and In x...

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Published inJournal of applied physics Vol. 119; no. 10
Main Authors Rhode, S. L., Horton, M. K., Sahonta, S.-L., Kappers, M. J., Haigh, S. J., Pennycook, T. J., McAleese, C., Humphreys, C. J., Dusane, R. O., Moram, M. A.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 14.03.2016
Subjects
Applied physics
ATOMS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Computer simulation
COMPUTERIZED SIMULATION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DISLOCATIONS
DISSOCIATION
FORECASTING
GALLIUM NITRIDES
INDIUM
Indium gallium nitrides
INDIUM NITRIDES
LENGTH
MONTE CARLO METHOD
Monte Carlo simulation
RINGS
Scanning electron microscopy
Scanning transmission electron microscopy
SEGREGATION
Threading dislocations
TRANSMISSION ELECTRON MICROSCOPY
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Summary:Threading dislocation core structures in c-plane GaN and In x Ga1− x N (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and In x Ga1− x N. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in In x Ga1− x N, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in In x Ga1− x N, consistent with predictions from atomistic Monte Carlo simulations.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4942847