Monolithically Integrated Circuits from Functional Oxides

• Published in: Advanced materials interfaces Vol. 1; no. 1; pp. np - n/a
• Main Authors: Jany, Rainer, Richter, Christoph, Woltmann, Carsten, Pfanzelt, Georg, Förg, Benjamin, Rommel, Marcus, Reindl, Thomas, Waizmann, Ulrike, Weis, Jürgen, Mundy, Julia A., Muller, David A., Boschker, Hans, Mannhart, Jochen
• Format: Journal Article
• Language: English
• Published: Weinheim John Wiley & Sons, Inc 01.02.2014
• Subjects: Devices; Electronics; Integrated circuits; memory applications; microelectronics; oxide interfaces; Oxides; Semiconductor devices; Semiconductors; Signal processing; Strontium titanates; thin films; Transistors
• ISSN: 2196-7350; 2196-7350
• DOI: 10.1002/admi.201300031

The rich array of conventional and exotic electronic properties that can be generated by oxide heterostructures is of great potential value for device applications. However, only single transistors bare of any circuit functionality have been realized from complex oxides. Here, monolithically‐integrated n‐type metal‐oxide‐semiconductor logic circuits are reported that utilize the two‐dimensional electron liquid generated at the LaAlO3/SrTiO3 interface. Providing the capability to process the signals of functional oxide devices such as sensors directly on oxide chips, these results illustrate the practicability and the potential of oxide electronics. A breakthrough in using functional oxides for electronics is reported. Integrated circuits based on LaAlO3/SrTiO3 interfaces and chips with 700 000 transistors are demonstrated. Providing the capability to process the signals of oxide devices such as sensors directly with oxide interfaces, these results illustrate the practicability and the potential of electronics based on functional oxides.