High-angle annular dark-field imaging of self-assembled Ge islands on Si(0 0 1) - Liu, Chuan-Pu; Twesten, R.D.; Gibson, J.Murray (Ultramicroscopy, 2001)
Keywords: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electron, ion, and scanning probe microscopy; Exact sciences and technology; Ge/Si; HAADF; Materials science; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum dot; Strain field; Structure of solids and liquids; crystallography; Transmission, reflection and scanning electron microscopy(including ebic); 61.16.Bg; 61.14.−x; Ge/Si; Strain field; Quantum dot; 68.35.Bs; 68.65.+g Subject index term: 08; HAADF; Chemical analysis; Semiconductor materials; Quantum dots; Defocusing; Measuring methods; STEM; Dark field microscopy; Stress distribution; Simulation; Nonmetals; Heterojunctions; Germanium; Chemical composition; Island structure; Quantitative chemical analysis; Image contrast; Lattice image