High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN - Breckenridge, M. Hayden; Bagheri, Pegah; Guo, Qiang; Sarkar, Biplab; Khachariya, Dolar; Pavlidis, Spyridon; Tweedie, James; Kirste, Ronny; Mita, Seiji; Reddy, Pramod; Collazo, Ramón; Sitar, Zlatko (Applied physics letters, 2021)
Keywords: Annealing; Applied physics; Carrier density; Dislocation density; Low temperature; Self compensation; Threading dislocations