High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
We demonstrate Si-implanted AlN with high conductivity (>1 Ω−1 cm−1) and high carrier concentration (5 × 1018 cm−3). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) (<103 cm−2), a non-equilibrium damage recovery and dopant activation annealing proces...
Saved in:
| Published in | Applied physics letters Vol. 118; no. 11 |
|---|---|
| Main Authors | , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Melville
American Institute of Physics
15.03.2021
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | We demonstrate Si-implanted AlN with high conductivity (>1 Ω−1 cm−1) and high carrier concentration (5 × 1018 cm−3). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) (<103 cm−2), a non-equilibrium damage recovery and dopant activation annealing process, and in situ suppression of self-compensation during the annealing. Low TDD and active suppression of VAl-nSiAl complexes via defect quasi Fermi level control enabled low compensation, while low-temperature, non-equilibrium annealing maintained the desired shallow donor state with an ionization energy of ∼70 meV. The realized n-type conductivity and carrier concentration are over one order of magnitude higher than that reported thus far and present a major technological breakthrough in doping of AlN. |
|---|---|
| AbstractList | We demonstrate Si-implanted AlN with high conductivity (>1 Ω−1 cm−1) and high carrier concentration (5 × 1018 cm−3). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) (<103 cm−2), a non-equilibrium damage recovery and dopant activation annealing process, and in situ suppression of self-compensation during the annealing. Low TDD and active suppression of VAl-nSiAl complexes via defect quasi Fermi level control enabled low compensation, while low-temperature, non-equilibrium annealing maintained the desired shallow donor state with an ionization energy of ∼70 meV. The realized n-type conductivity and carrier concentration are over one order of magnitude higher than that reported thus far and present a major technological breakthrough in doping of AlN. |
| Author | Bagheri, Pegah Collazo, Ramón Mita, Seiji Reddy, Pramod Breckenridge, M. Hayden Sarkar, Biplab Guo, Qiang Tweedie, James Sitar, Zlatko Pavlidis, Spyridon Kirste, Ronny Khachariya, Dolar |
| Author_xml | – sequence: 1 givenname: M. Hayden surname: Breckenridge fullname: Breckenridge, M. Hayden organization: Department of Material Science and Engineering, North Carolina State University – sequence: 2 givenname: Pegah surname: Bagheri fullname: Bagheri, Pegah organization: Department of Material Science and Engineering, North Carolina State University – sequence: 3 givenname: Qiang surname: Guo fullname: Guo, Qiang organization: Department of Material Science and Engineering, North Carolina State University – sequence: 4 givenname: Biplab surname: Sarkar fullname: Sarkar, Biplab organization: Department of Material Science and Engineering, North Carolina State University – sequence: 5 givenname: Dolar surname: Khachariya fullname: Khachariya, Dolar organization: Department of Electrical and Computer Engineering, North Carolina State University – sequence: 6 givenname: Spyridon surname: Pavlidis fullname: Pavlidis, Spyridon organization: Department of Electrical and Computer Engineering, North Carolina State University – sequence: 7 givenname: James surname: Tweedie fullname: Tweedie, James organization: Adroit Materials – sequence: 8 givenname: Ronny surname: Kirste fullname: Kirste, Ronny organization: Adroit Materials – sequence: 9 givenname: Seiji surname: Mita fullname: Mita, Seiji organization: Adroit Materials – sequence: 10 givenname: Pramod surname: Reddy fullname: Reddy, Pramod organization: Adroit Materials – sequence: 11 givenname: Ramón surname: Collazo fullname: Collazo, Ramón organization: Department of Material Science and Engineering, North Carolina State University – sequence: 12 givenname: Zlatko surname: Sitar fullname: Sitar, Zlatko organization: 3Adroit Materials, Cary, North Carolina 27518, USA |
| BackLink | https://www.osti.gov/biblio/1771214$$D View this record in Osti.gov |
| BookMark | eNp90M1KAzEUBeAgFWyrC99g0JXC1PxMJtNlKWqFogvrOqRJxqZMkzFJi317U1sRRF2FkO_eHE4PdKyzGoBzBAcIluSGDiAscEXZEegiyFhOEKo6oAshJHk5pOgE9EJYpivFhHTBbGJeF5nN47bVmXRWrWU0GxO3mbAqk8J7o_3uQWobvYjG2czY7NnkZtU2wkatsoVbOd2aKN6NaLJR83gKjmvRBH12OPvg5e52Np7k06f7h_FomsuC0pjPtapZwVKUSlJZMKogVgILyErMqESCMFZoNMSYSFLOWZVYpZSAgtF5XSnSBxf7vS5Ew4M0UctFymq1jBwxhjAqErrco9a7t7UOkS_d2tuUi2MKEWWwrFBSV3slvQvB65q33qyE33IE-a5ZTvmh2WRvftj082c1qSHT_DpxvZ8IX_Lf9X_ijfPfkLeqJh9hUJdB |
| CODEN | APPLAB |
| CitedBy_id | crossref_primary_10_1063_5_0082348 crossref_primary_10_1063_5_0214291 crossref_primary_10_1063_5_0253813 crossref_primary_10_1063_5_0146439 crossref_primary_10_1063_5_0071791 crossref_primary_10_1093_oxfmat_itac004 crossref_primary_10_1063_5_0174524 crossref_primary_10_1103_PhysRevB_107_245202 crossref_primary_10_1002_pssr_202400017 crossref_primary_10_1088_1674_4926_45_2_021501 crossref_primary_10_1063_5_0059037 crossref_primary_10_1063_5_0074454 crossref_primary_10_3390_cryst12010038 crossref_primary_10_3390_cryst12121812 crossref_primary_10_1088_1361_6641_ac27e7 crossref_primary_10_35848_1882_0786_acdcde crossref_primary_10_1002_aelm_202300840 crossref_primary_10_1002_pssr_202200397 crossref_primary_10_1063_5_0156691 crossref_primary_10_35848_1347_4065_acb898 crossref_primary_10_1063_5_0086314 crossref_primary_10_35848_1347_4065_ac47aa crossref_primary_10_1063_5_0159641 crossref_primary_10_35848_1347_4065_ac15ae crossref_primary_10_35848_1882_0786_ad81c9 crossref_primary_10_1103_PhysRevB_108_035205 crossref_primary_10_1016_j_vacuum_2023_112829 |
| Cites_doi | 10.7567/APEX.8.061003 10.1063/1.4967397 10.1143/JJAP.33.2453 10.7567/APEX.9.025501 10.1063/1.2458399 10.1063/1.4896377 10.1016/j.jcrysgro.2005.10.074 10.1063/1.4901954 10.1063/1.1824181 10.1002/pssa.200880961 10.1038/srep27954 10.1063/1.5011984 10.1063/1.5144080 10.1063/1.4941814 10.1063/1.4964442 10.1063/1.5132953 10.1103/PhysRevB.61.R16283 10.1063/1.4962017 10.1063/1.4874735 10.1063/1.120310 10.1063/1.5002682 10.1143/JJAP.30.3475 10.1063/1.4972468 10.1002/pssa.201000947 10.1063/1.4903058 10.1149/1.3560527 10.1063/1.1682673 10.1063/1.2204656 10.1117/12.2041018 10.1063/1.4930026 10.1016/j.jcrysgro.2005.11.047 10.1063/1.5000720 10.1016/j.jcrysgro.2009.10.008 10.1016/j.jcrysgro.2007.12.051 10.1063/1.2170407 10.1007/s11664-012-2342-9 10.1063/1.5022794 10.7567/JJAP.56.100302 10.1002/pssc.201000964 10.1063/1.4807906 10.1103/PhysRevApplied.9.054036 10.1103/PhysRevB.89.035204 10.1016/j.jcrysgro.2008.06.015 10.1002/pssa.200565389 10.1063/1.2952027 10.1063/1.4792694 |
| ContentType | Journal Article |
| Copyright | Author(s) 2021 Author(s). Published under license by AIP Publishing. |
| Copyright_xml | – notice: Author(s) – notice: 2021 Author(s). Published under license by AIP Publishing. |
| DBID | AAYXX CITATION 8FD H8D L7M OTOTI |
| DOI | 10.1063/5.0042857 |
| DatabaseName | CrossRef Technology Research Database Aerospace Database Advanced Technologies Database with Aerospace OSTI.GOV |
| DatabaseTitle | CrossRef Technology Research Database Aerospace Database Advanced Technologies Database with Aerospace |
| DatabaseTitleList | Technology Research Database CrossRef |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| EISSN | 1077-3118 |
| ExternalDocumentID | 1771214 10_1063_5_0042857 apl |
| GrantInformation_xml | – fundername: Army Research Office grantid: W911NF-16-C-0101 funderid: https://doi.org/10.13039/100000183 – fundername: National Science Foundation grantid: ECCS-1610992 funderid: https://doi.org/10.13039/100000001 – fundername: National Science Foundation grantid: DMR-1508191 funderid: https://doi.org/10.13039/100000001 – fundername: Army Research Office grantid: W911NF-15-2-0068 funderid: https://doi.org/10.13039/100000183 – fundername: Air Force Office of Scientific Research grantid: FA9550-17-1-0225 funderid: https://doi.org/10.13039/100000181 – fundername: National Science Foundation grantid: ECCS-1653383 funderid: https://doi.org/10.13039/100000001 – fundername: U.S. Department of Energy grantid: DE-SC0011883 funderid: https://doi.org/10.13039/100000015 – fundername: National Science Foundation grantid: ECCS-1508854 funderid: https://doi.org/10.13039/100000001 – fundername: Air Force Office of Scientific Research grantid: FA9550-19-1-0114 funderid: https://doi.org/10.13039/100000181 |
| GroupedDBID | -DZ -~X .DC 1UP 2-P 23M 4.4 53G 5GY 5VS 6J9 A9. AAAAW AABDS AAEUA AAGZG AAPUP AAYIH ABFTF ABJNI ABZEH ACBEA ACBRY ACGFO ACGFS ACLYJ ACNCT ACZLF ADCTM AEGXH AEJMO AENEX AFATG AFHCQ AGKCL AGLKD AGMXG AGTJO AHSDT AIAGR AJJCW AJQPL ALEPV ALMA_UNASSIGNED_HOLDINGS AQWKA ATXIE AWQPM BPZLN CS3 D0L EBS ESX F.2 F5P FDOHQ FFFMQ HAM M6X M71 M73 N9A NPSNA O-B P2P RIP RNS RQS SJN TAE TN5 UCJ UPT WH7 XJE YZZ ~02 AAGWI AAYXX ABJGX ADMLS BDMKI CITATION 8FD H8D L7M 0ZJ ABPTK AGIHO OTOTI UE8 |
| ID | FETCH-LOGICAL-c455t-bedf7470058c5c475d02da2a076275c1a3774e19223c36b788c58dda0a75bf8d3 |
| ISSN | 0003-6951 |
| IngestDate | Fri May 19 00:45:58 EDT 2023 Sun Jun 29 15:36:04 EDT 2025 Thu Apr 24 23:02:30 EDT 2025 Tue Jul 01 01:08:04 EDT 2025 Fri Jun 21 00:13:52 EDT 2024 Thu Jun 23 13:44:59 EDT 2022 |
| IsDoiOpenAccess | false |
| IsOpenAccess | true |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 11 |
| Language | English |
| License | 0003-6951/2021/118(11)/112104/4/$30.00 Published under license by AIP Publishing. |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c455t-bedf7470058c5c475d02da2a076275c1a3774e19223c36b788c58dda0a75bf8d3 |
| Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 USDOE SC0011883 |
| ORCID | 0000-0002-8556-1178 0000-0002-3530-1888 0000-0002-8780-4583 0000-0002-8738-5921 0000-0002-1880-4811 0000-0002-7385-0837 0000-0003-0074-0626 0000-0002-1690-2581 0000000285561178 0000000287385921 0000000287804583 0000000273850837 0000000300740626 0000000218804811 0000000235301888 0000000216902581 |
| OpenAccessLink | https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0042857/13040399/112104_1_online.pdf |
| PQID | 2501570681 |
| PQPubID | 2050678 |
| PageCount | 4 |
| ParticipantIDs | scitation_primary_10_1063_5_0042857 crossref_primary_10_1063_5_0042857 proquest_journals_2501570681 crossref_citationtrail_10_1063_5_0042857 osti_scitechconnect_1771214 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 20210315 2021-03-15 |
| PublicationDateYYYYMMDD | 2021-03-15 |
| PublicationDate_xml | – month: 03 year: 2021 text: 20210315 day: 15 |
| PublicationDecade | 2020 |
| PublicationPlace | Melville |
| PublicationPlace_xml | – name: Melville – name: United States |
| PublicationTitle | Applied physics letters |
| PublicationYear | 2021 |
| Publisher | American Institute of Physics |
| Publisher_xml | – name: American Institute of Physics |
| References | Bryan, Bryan, Washiyama, Reddy, Gaddy, Sarkar, Breckenridge, Guo, Bobea, Tweedie, Mita, Irving, Collazo, Sitar (c9) 2018 Breckenridge, Guo, Klump, Sarkar, Guan, Tweedie, Kirste, Mita, Reddy, Collazo, Sitar (c18) 2020 Mehnke, Trinh, Pingel, Wernicke, Janzén, Son, Kneissl (c22) 2016 Alberi, Scarpulla (c30) 2016 Kinoshita, Nagashima, Obata, Takashima, Yamamoto, Togashi, Kumagai, Schlesser, Collazo, Koukitu, Sitar (c4) 2015 Miyake, Nishio, Suzuki, Hiramatsu, Fukuyama, Kaur, Kuwano (c13) 2016 Reddy, Washiyama, Kaess, Kirste, Mita, Collazo, Sitar (c27) 2017 Ichimura, Wada, Fujita, Fujita (c36) 1991 Hirayama, Fujikawa, Noguchi, Norimatsu, Takano, Tsubaki, Kamata (c11) 2009 Zeisel, Bayerl, Goennenwein, Dimitrov, Ambacher, Brandt, Stutzmann (c6) 2000 Kaess, Reddy, Alden, Klump, Hernandez-Balderrama, Franke, Kirste, Hoffmann, Collazo, Sitar (c41) 2016 Chichibu, Miyake, Ishikawa, Tashiro, Ohtomo, Furusawa, Hazu, Hiramatsu, Uedono (c14) 2013 Bryan, Hoffmann, Tweedie, Kirste, Callsen, Bryan, Rice, Bobea, Mita, Xie, Sitar, Collazo (c31) 2013 Collazo, Mita, Xie, Rice, Tweedie, Dalmau, Sitar (c16) 2011 Bryan, Bryan, Gaddy, Reddy, Hussey, Bobea, Guo, Hoffmann, Kirste, Tweedie, Gerhold, Irving, Sitar, Collazo (c32) 2014 Mita, Collazo, Rice, Dalmau, Sitar (c21) 2008 Alden, Harris, Bryan, Baker, Reddy, Mita, Callsen, Hoffmann, Irving, Collazo, Sitar (c45) 2018 Silveira, Freitas, Schujman, Schowalter (c1) 2008 Reddy, Kaess, Tweedie, Kirste, Mita, Collazo, Sitar (c47) 2017 Feneberg, Neuschl, Thonke, Collazo, Rice, Sitar, Dalmau, Xie, Mita, Goldhahn (c15) 2011 Washiyama, Reddy, Sarkar, Breckenridge, Guo, Bagheri, Klump, Kirste, Tweedie, Mita, Sitar, Collazo (c28) 2020 Kyle, Kaun, Burke, Wu, Wu, Speck (c8) 2014 Dalmau, Moody, Schlesser, Mita, Xie, Feneberg, Neuschl, Thonke, Collazo, Rice, Tweedie, Sitar (c17) 2011 Haidet, Sarkar, Reddy, Bryan, Bryan, Kirste, Collazo, Sitar (c43) 2017 Lu, Collazo, Dalmau, Durkaya, Dietz, Raghothamachar, Dudley, Sitar (c39) 2009 Bai, Dudley, Sun, Wang, Khan (c12) 2006 Cao, Chu, Li, Chen, Chang, Hughes (c24) 2016 Hoffmann, Tweedie, Kirste, Bryan, Bryan, Gerhold, Sitar, Collazo (c33) 2014 Nakano, Imura, Narita, Kitano, Hirose, Fujimoto, Okada, Kawashima, Iida, Balakrishnan, Tsuda, Iwaya, Kamiyama, Amano, Akasaki (c10) 2006 Zhuang, Herro, Schlesser, Sitar (c38) 2006 Lyons, Janotti, Van de Walle (c44) 2014 Fichtenbaum, Mates, Keller, DenBaars, Mishra (c25) 2008 Kaess, Mita, Xie, Reddy, Klump, Hernandez-Balderrama, Washiyama, Franke, Kirste, Hoffmann, Collazo, Sitar (c23) 2016 Saxler, Walker, Kung, Zhang, Razeghi, Solomon, Mitchel, Vydyanath (c26) 1997 Reddy, Bryan, Bryan, Tweedie, Washiyama, Kirste, Mita, Collazo, Sitar (c48) 2015 Reddy, Hoffmann, Kaess, Bryan, Bryan, Bobea, Klump, Tweedie, Kirste, Mita, Gerhold, Collazo, Sitar (c29) 2016 Reddy, Bryan, Bryan, Tweedie, Kirste, Collazo, Sitar (c5) 2014 Herro, Zhuang, Schlesser, Collazo, Sitar (c37) 2006 Guo, Yoshida (c2) 1994 Kanechika, Kachi (c19) 2006 de Walle, Neugebauer (c20) 2004 Harris, Baker, Gaddy, Bryan, Bryan, Mirrielees, Reddy, Collazo, Sitar, Irving (c46) 2018 France, Xu, Chen, Chandrasekaran, Moustakas (c42) 2007 Reddy, Bryan, Bryan, Guo, Hussey, Collazo, Sitar (c49) 2014 Taniyasu, Kasu, Makimoto (c7) 2004 Bryan, Rice, Hussey, Bryan, Bobea, Mita, Xie, Kirste, Collazo, Sitar (c40) 2013 (2023061717061048300_c27) 2017; 122 (2023061717061048300_c41) 2016; 120 (2023061717061048300_c11) 2009; 206 (2023061717061048300_c20) 2004; 95 (2023061717061048300_c25) 2008; 310 (2023061717061048300_c44) 2014; 89 (2023061717061048300_c45) 2018; 9 (2023061717061048300_c6) 2000; 61 (2023061717061048300_c13) 2016; 9 (2023061717061048300_c23) 2016; 120 (2023061717061048300_c26) 1997; 71 (2023061717061048300_c47) 2017; 111 (2023061717061048300_c48) 2015; 107 (2023061717061048300_c34) 2013 (2023061717061048300_c24) 2016; 108 (2023061717061048300_c17) 2011; 158 (2023061717061048300_c16) 2011; 8 (2023061717061048300_c22) 2016; 120 (2023061717061048300_c14) 2013; 113 (2023061717061048300_c31) 2013; 42 (2023061717061048300_c29) 2016; 120 (2023061717061048300_c18) 2020; 116 (2023061717061048300_c3) 2009 (2023061717061048300_c2) 1994; 33 (2023061717061048300_c5) 2014; 116 (2023061717061048300_c12) 2006; 88 (2023061717061048300_c8) 2014; 115 (2023061717061048300_c21) 2008; 104 (2023061717061048300_c39) 2009; 312 (2023061717061048300_c33) 2014; 8986 (2023061717061048300_c37) 2006; 286 (2023061717061048300_c19) 2006; 88 (2023061717061048300_c1) 2008; 310 (2023061717061048300_c15) 2011; 208 (2023061717061048300_c28) 2020; 127 (2023061717061048300_c35) 2012 (2023061717061048300_c32) 2014; 105 (2023061717061048300_c46) 2018; 112 (2023061717061048300_c36) 1991; 30 (2023061717061048300_c40) 2013; 102 (2023061717061048300_c4) 2015; 8 (2023061717061048300_c30) 2016; 6 (2023061717061048300_c9) 2018; 112 (2023061717061048300_c38) 2006; 287 (2023061717061048300_c10) 2006; 203 (2023061717061048300_c43) 2017; 56 (2023061717061048300_c7) 2004; 85 (2023061717061048300_c42) 2007; 90 (2023061717061048300_c49) 2014; 116 |
| References_xml | – start-page: 105702 year: 2020 ident: c28 publication-title: J. Appl. Phys. – start-page: 205 year: 2006 ident: c37 publication-title: J. Cryst. Growth – start-page: 3272 year: 1997 ident: c26 publication-title: Appl. Phys. Lett. – start-page: 2453 year: 1994 ident: c2 publication-title: Jpn. J. Appl. Phys., Part 1 – start-page: 062103 year: 2016 ident: c24 publication-title: Appl. Phys. Lett. – start-page: 054036 year: 2018 ident: c45 publication-title: Phys. Rev. Appl. – start-page: R16283 year: 2000 ident: c6 publication-title: Phys. Rev. B – start-page: 062102 year: 2018 ident: c9 publication-title: Appl. Phys. Lett. – start-page: 051903 year: 2006 ident: c12 publication-title: Appl. Phys. Lett. – start-page: 235705 year: 2016 ident: c41 publication-title: J. Appl. Phys. – start-page: 3851 year: 2004 ident: c20 publication-title: J. Appl. Phys. – start-page: 58 year: 2009 ident: c39 publication-title: J. Cryst. Growth – start-page: 152101 year: 2018 ident: c46 publication-title: Appl. Phys. Lett. – start-page: 4007 year: 2008 ident: c1 publication-title: J. Cryst. Growth – start-page: 27954 year: 2016 ident: c30 publication-title: Sci. Rep. – start-page: 3475 year: 1991 ident: c36 publication-title: Jpn. J. Appl. Phys., Part 1 – start-page: 123701 year: 2014 ident: c49 publication-title: J. Appl. Phys. – start-page: 105701 year: 2016 ident: c23 publication-title: J. Appl. Phys. – start-page: H530 year: 2011 ident: c17 publication-title: J. Electrochem. Soc. – start-page: 185704 year: 2016 ident: c29 publication-title: J. Appl. Phys. – start-page: 1124 year: 2008 ident: c25 publication-title: J. Cryst. Growth – start-page: 062115 year: 2007 ident: c42 publication-title: Appl. Phys. Lett. – start-page: 100302 year: 2017 ident: c43 publication-title: Jpn. J. Appl. Phys., Part 1 – start-page: 061602 year: 2013 ident: c40 publication-title: Appl. Phys. Lett. – start-page: 1632 year: 2006 ident: c10 publication-title: Phys. Status Solidi A – start-page: 372 year: 2006 ident: c38 publication-title: J. Cryst. Growth – start-page: 1520 year: 2011 ident: c15 publication-title: Phys. Status Solidi A – start-page: 202106 year: 2006 ident: c19 publication-title: Appl. Phys. Lett. – start-page: 061003 year: 2015 ident: c4 publication-title: Appl. Phys. Express – start-page: 193702 year: 2014 ident: c8 publication-title: J. Appl. Phys. – start-page: 013521 year: 2008 ident: c21 publication-title: J. Appl. Phys. – start-page: 222101 year: 2014 ident: c32 publication-title: Appl. Phys. Lett. – start-page: 172103 year: 2020 ident: c18 publication-title: Appl. Phys. Lett. – start-page: 245702 year: 2017 ident: c27 publication-title: J. Appl. Phys. – start-page: 194503 year: 2014 ident: c5 publication-title: J. Appl. Phys. – start-page: 145702 year: 2016 ident: c22 publication-title: J. Appl. Phys. – start-page: 89860T year: 2014 ident: c33 publication-title: SPIE Proc. – start-page: 091603 year: 2015 ident: c48 publication-title: Appl. Phys. Lett. – start-page: 4672 year: 2004 ident: c7 publication-title: Appl. Phys. Lett. – start-page: 1176 year: 2009 ident: c11 publication-title: Phys. Status Solidi A – start-page: 213506 year: 2013 ident: c14 publication-title: J. Appl. Phys. – start-page: 025501 year: 2016 ident: c13 publication-title: Appl. Phys. Express – start-page: 2031 year: 2011 ident: c16 publication-title: Phys. Status Solidi C – start-page: 152101 year: 2017 ident: c47 publication-title: Appl. Phys. Lett. – start-page: 815 year: 2013 ident: c31 publication-title: J. Electron. Mater. – start-page: 035204 year: 2014 ident: c44 publication-title: Phys. Rev. B – volume-title: Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth year: 2009 ident: 2023061717061048300_c3 – volume: 8 start-page: 061003 year: 2015 ident: 2023061717061048300_c4 publication-title: Appl. Phys. Express doi: 10.7567/APEX.8.061003 – volume: 120 start-page: 185704 year: 2016 ident: 2023061717061048300_c29 publication-title: J. Appl. Phys. doi: 10.1063/1.4967397 – volume: 33 start-page: 2453 year: 1994 ident: 2023061717061048300_c2 publication-title: Jpn. J. Appl. Phys., Part 1 doi: 10.1143/JJAP.33.2453 – volume: 9 start-page: 025501 year: 2016 ident: 2023061717061048300_c13 publication-title: Appl. Phys. Express doi: 10.7567/APEX.9.025501 – volume: 90 start-page: 062115 year: 2007 ident: 2023061717061048300_c42 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2458399 – volume: 116 start-page: 123701 year: 2014 ident: 2023061717061048300_c49 publication-title: J. Appl. Phys. doi: 10.1063/1.4896377 – volume: 286 start-page: 205 year: 2006 ident: 2023061717061048300_c37 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2005.10.074 – volume: 116 start-page: 194503 year: 2014 ident: 2023061717061048300_c5 publication-title: J. Appl. Phys. doi: 10.1063/1.4901954 – volume: 85 start-page: 4672 year: 2004 ident: 2023061717061048300_c7 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1824181 – volume: 206 start-page: 1176 year: 2009 ident: 2023061717061048300_c11 publication-title: Phys. Status Solidi A doi: 10.1002/pssa.200880961 – volume: 6 start-page: 27954 year: 2016 ident: 2023061717061048300_c30 publication-title: Sci. Rep. doi: 10.1038/srep27954 – volume: 112 start-page: 062102 year: 2018 ident: 2023061717061048300_c9 publication-title: Appl. Phys. Lett. doi: 10.1063/1.5011984 – volume: 116 start-page: 172103 year: 2020 ident: 2023061717061048300_c18 publication-title: Appl. Phys. Lett. doi: 10.1063/1.5144080 – volume: 108 start-page: 062103 year: 2016 ident: 2023061717061048300_c24 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4941814 – volume: 120 start-page: 145702 year: 2016 ident: 2023061717061048300_c22 publication-title: J. Appl. Phys. doi: 10.1063/1.4964442 – volume: 127 start-page: 105702 year: 2020 ident: 2023061717061048300_c28 publication-title: J. Appl. Phys. doi: 10.1063/1.5132953 – volume: 61 start-page: R16283 year: 2000 ident: 2023061717061048300_c6 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.61.R16283 – volume: 120 start-page: 105701 year: 2016 ident: 2023061717061048300_c23 publication-title: J. Appl. Phys. doi: 10.1063/1.4962017 – volume: 115 start-page: 193702 year: 2014 ident: 2023061717061048300_c8 publication-title: J. Appl. Phys. doi: 10.1063/1.4874735 – volume: 71 start-page: 3272 year: 1997 ident: 2023061717061048300_c26 publication-title: Appl. Phys. Lett. doi: 10.1063/1.120310 – volume: 122 start-page: 245702 year: 2017 ident: 2023061717061048300_c27 publication-title: J. Appl. Phys. doi: 10.1063/1.5002682 – volume: 30 start-page: 3475 year: 1991 ident: 2023061717061048300_c36 publication-title: Jpn. J. Appl. Phys., Part 1 doi: 10.1143/JJAP.30.3475 – volume: 120 start-page: 235705 year: 2016 ident: 2023061717061048300_c41 publication-title: J. Appl. Phys. doi: 10.1063/1.4972468 – volume: 208 start-page: 1520 year: 2011 ident: 2023061717061048300_c15 publication-title: Phys. Status Solidi A doi: 10.1002/pssa.201000947 – volume: 105 start-page: 222101 year: 2014 ident: 2023061717061048300_c32 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4903058 – volume: 158 start-page: H530 year: 2011 ident: 2023061717061048300_c17 publication-title: J. Electrochem. Soc. doi: 10.1149/1.3560527 – volume: 95 start-page: 3851 year: 2004 ident: 2023061717061048300_c20 publication-title: J. Appl. Phys. doi: 10.1063/1.1682673 – volume: 88 start-page: 202106 year: 2006 ident: 2023061717061048300_c19 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2204656 – volume: 8986 start-page: 89860T year: 2014 ident: 2023061717061048300_c33 publication-title: SPIE Proc. doi: 10.1117/12.2041018 – volume: 107 start-page: 091603 year: 2015 ident: 2023061717061048300_c48 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4930026 – volume-title: X-Ray Characterization and Defect Control of III-Nitrides year: 2012 ident: 2023061717061048300_c35 – volume: 287 start-page: 372 year: 2006 ident: 2023061717061048300_c38 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2005.11.047 – volume: 111 start-page: 152101 year: 2017 ident: 2023061717061048300_c47 publication-title: Appl. Phys. Lett. doi: 10.1063/1.5000720 – volume: 312 start-page: 58 year: 2009 ident: 2023061717061048300_c39 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2009.10.008 – volume: 310 start-page: 1124 year: 2008 ident: 2023061717061048300_c25 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2007.12.051 – volume-title: Polarity Control and Doping in Aluminum Gallium Nitride year: 2013 ident: 2023061717061048300_c34 – volume: 88 start-page: 051903 year: 2006 ident: 2023061717061048300_c12 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2170407 – volume: 42 start-page: 815 year: 2013 ident: 2023061717061048300_c31 publication-title: J. Electron. Mater. doi: 10.1007/s11664-012-2342-9 – volume: 112 start-page: 152101 year: 2018 ident: 2023061717061048300_c46 publication-title: Appl. Phys. Lett. doi: 10.1063/1.5022794 – volume: 56 start-page: 100302 year: 2017 ident: 2023061717061048300_c43 publication-title: Jpn. J. Appl. Phys., Part 1 doi: 10.7567/JJAP.56.100302 – volume: 8 start-page: 2031 year: 2011 ident: 2023061717061048300_c16 publication-title: Phys. Status Solidi C doi: 10.1002/pssc.201000964 – volume: 113 start-page: 213506 year: 2013 ident: 2023061717061048300_c14 publication-title: J. Appl. Phys. doi: 10.1063/1.4807906 – volume: 9 start-page: 054036 year: 2018 ident: 2023061717061048300_c45 publication-title: Phys. Rev. Appl. doi: 10.1103/PhysRevApplied.9.054036 – volume: 89 start-page: 035204 year: 2014 ident: 2023061717061048300_c44 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.89.035204 – volume: 310 start-page: 4007 year: 2008 ident: 2023061717061048300_c1 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2008.06.015 – volume: 203 start-page: 1632 year: 2006 ident: 2023061717061048300_c10 publication-title: Phys. Status Solidi A doi: 10.1002/pssa.200565389 – volume: 104 start-page: 013521 year: 2008 ident: 2023061717061048300_c21 publication-title: J. Appl. Phys. doi: 10.1063/1.2952027 – volume: 102 start-page: 061602 year: 2013 ident: 2023061717061048300_c40 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4792694 |
| SSID | ssj0005233 |
| Score | 2.4901848 |
| Snippet | We demonstrate Si-implanted AlN with high conductivity (>1 Ω−1 cm−1) and high carrier concentration (5 × 1018 cm−3). This was enabled by Si implantation into... |
| SourceID | osti proquest crossref scitation |
| SourceType | Open Access Repository Aggregation Database Enrichment Source Index Database Publisher |
| SubjectTerms | Annealing Applied physics Carrier density Dislocation density Low temperature Self compensation Threading dislocations |
| Title | High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN |
| URI | http://dx.doi.org/10.1063/5.0042857 https://www.proquest.com/docview/2501570681 https://www.osti.gov/biblio/1771214 |
| Volume | 118 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb9NAEF5BKgQcEBQQoQWtgAOS5db2er3OMeUVIVqB2ki9WftyazW1o9RBwK9n1usnjVDhYkXWJF7t9-1kZjwPhN4IsJK9SaBcIaR2QyKZKwIqXM_OYiQ0rLLdD4-i2Tz8fEpPu4TMqrqkFHvy18a6kv9BFe4BrqZK9h-QbX8UbsBnwBeugDBcb4SxSdJwcset4qjg2JrerXYYRFWtxlfVODppKhPzuj2uiW8cZ252uVyYPVXOeXFZaDM65IeJnU8XR31ztbFRbfzjyllUxT9dZB3U5QUsrh3QvufM-E_VVZcdcJNFktlE4LMu9PxpXUVovwE3z9oYD19d2GzvgwwWJ_rxiKBKyLIVma2OJW40qdvIaqtWPWaiobWmbfRup3jXTfHJNYUOFhSgYOJe4CfZVtbDptl__Jm1KYbVy_WIJDSpv3obbQXgSgQjtDV9f_jluJcIREgzV9Gsu-k_FZH99rkDq2VUgPYdeCR3wVyxmRM94-TkIXpQexV4ainyCN3S-Ta63-s1uY3ufLUYPkZzQxuc44o2uE8bDLTBNW3wgDY4y3GfNnhAGwy0eYLmHz-cvJu59XQNV4aUlq7QKgVf0syVlFSGjCovUDzgHjONq6XPCXgGGhyAgEgSCRaDWKwU9zijIo0VeYpGeZHrZwjLKKaepiCu0jBl0YTDyWfcI5L7Unr-GL1tdi9pNspMQFkk11Aao1et6NL2W9kktGMgSMyua3kuTUqYLBOfMT_wwzHabZBJ6sN6lYCl71PmRTEs5nWL1t8esUHqe7HqJJKlSp_fZLU76F53TnbRqFyt9QuwZEvxsqbib-VBnBU |
| linkProvider | EBSCOhost |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=High+n+-type+conductivity+and+carrier+concentration+in+Si-implanted+homoepitaxial+AlN&rft.jtitle=Applied+physics+letters&rft.au=Breckenridge%2C+M.+Hayden&rft.au=Bagheri%2C+Pegah&rft.au=Guo%2C+Qiang&rft.au=Sarkar%2C+Biplab&rft.date=2021-03-15&rft.issn=0003-6951&rft.eissn=1077-3118&rft.volume=118&rft.issue=11&rft_id=info:doi/10.1063%2F5.0042857&rft.externalDBID=n%2Fa&rft.externalDocID=10_1063_5_0042857 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0003-6951&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0003-6951&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0003-6951&client=summon |