APA (7th ed.) Citation

Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., . . . Sitar, Z. (2021). High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN. Applied physics letters, 118(11), . https://doi.org/10.1063/5.0042857

Chicago Style (17th ed.) Citation

Breckenridge, M. Hayden, et al. "High N-type Conductivity and Carrier Concentration in Si-implanted Homoepitaxial AlN." Applied Physics Letters 118, no. 11 (2021). https://doi.org/10.1063/5.0042857.

MLA (9th ed.) Citation

Breckenridge, M. Hayden, et al. "High N-type Conductivity and Carrier Concentration in Si-implanted Homoepitaxial AlN." Applied Physics Letters, vol. 118, no. 11, 2021, https://doi.org/10.1063/5.0042857.