Quantum confinement effect of nanocrystalline GaN films prepared by pulsed-laser ablation under various Ar pressures

• Published in: Thin solid films Vol. 471; no. 1; pp. 273 - 276
• Main Authors: Yoon, Jong-Won, Sasaki, Takeshi, Roh, Cheong Hyun, Shim, Seung Hwan, Shim, Kwang Bo, Koshizaki, Naoto
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 2005; Elsevier Science
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Laser ablation; Laser deposition; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Optical properties; Physics; 79.20.D; Laser ablation; Optical properties; 78.66.J; Nanocrystalline-materials; Confinement; Inorganic compounds; Pressure effects; Gallium nitrides; Quantum effect; Crystal growth from vapors; XRD; SAED; Experimental study; Pulsed lasers; Thin films; Hexagonal lattices; Transmission electron microscopy; Wurtzite structure; Laser ablation technique; Absorption spectra; 78.66.J Laser ablation; Nanostructured materials; Nanocrystal; III-V semiconductors

Pulsed-laser deposition (PLD) was performed under various Ar pressures to prepare nanocrystalline GaN films without substrate heating or any post-annealing treatment. The X-ray diffraction (XRD) pattern and selected area electron diffraction indicated that the deposited films were hexagonal GaN with...