Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode

• Published in: Nanomaterials (Basel, Switzerland) Vol. 10; no. 9; p. 1634
• Main Authors: Alimkhanuly, Batyrbek, Kim, Sanghoek, Kim, Lok-won, Lee, Seunghyun
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 20.08.2020; MDPI
• Subjects: Arrays; Circuits; Compliance; Computer storage devices; device modeling; Electrodes; Electromagnetic fields; EM analysis; Energy consumption; Etching; Field strength; Graphene; memory; Memory devices; Random access memory; sub-nm thin electrode; Switching; Transistors; VRRAM; United States > US

Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in sim...