Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix

• Published in: Nanomaterials (Basel, Switzerland) Vol. 12; no. 11; p. 1840
• Main Authors: Korolev, Dmitry S., Matyunina, Kristina S., Nikolskaya, Alena A., Kriukov, Ruslan N., Nezhdanov, Alexey V., Belov, Alexey I., Mikhaylov, Alexey N., Sushkov, Artem A., Pavlov, Dmitry A., Yunin, Pavel A., Drozdov, Mikhail N., Tetelbaum, David I.
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 27.05.2022; MDPI
• Subjects: Annealing; Chemical composition; Chemical elements; Chemical synthesis; Crystals; Decomposition; Gallium; gallium oxide; Gallium oxides; Ion beams; Ion implantation; ion-beam synthesis; Irradiation; Nanocrystals; Nanomaterials; Nanostructured materials; Nanotechnology; Nonmetallic inclusions; Photoluminescence; Photons; Radiation; Recombination; Silicon compounds; Silicon dioxide; silicon oxide; Silicon wafers; Structural analysis; thermal annealing; Transmission electron microscopy; Germany

A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO2/Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gallium and oxygen) on the chemical composition of im...