Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix

A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO2/Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gallium and oxygen) on the chemical composition of im...

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Published inNanomaterials (Basel, Switzerland) Vol. 12; no. 11; p. 1840
Main Authors Korolev, Dmitry S., Matyunina, Kristina S., Nikolskaya, Alena A., Kriukov, Ruslan N., Nezhdanov, Alexey V., Belov, Alexey I., Mikhaylov, Alexey N., Sushkov, Artem A., Pavlov, Dmitry A., Yunin, Pavel A., Drozdov, Mikhail N., Tetelbaum, David I.
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 27.05.2022
MDPI
Subjects
Annealing
Chemical composition
Chemical elements
Chemical synthesis
Crystals
Decomposition
Gallium
gallium oxide
Gallium oxides
Ion beams
Ion implantation
ion-beam synthesis
Irradiation
Nanocrystals
Nanomaterials
Nanostructured materials
Nanotechnology
Nonmetallic inclusions
Photoluminescence
Photons
Radiation
Recombination
Silicon compounds
Silicon dioxide
silicon oxide
Silicon wafers
Structural analysis
thermal annealing
Transmission electron microscopy
Germany
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Abstract A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO2/Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gallium and oxygen) on the chemical composition of implanted layers is reported. The separation of gallium profiles in the elemental and oxidized states is shown, even in the absence of post-implantation annealing. As a result of annealing, blue photoluminescence, associated with the recombination of donor–acceptor pairs (DAP) in Ga2O3 nanocrystals, appears in the spectrum. The structural characterization by transmission electron microscopy confirms the formation of β-Ga2O3 nanocrystals. The obtained results open up the possibility of using nanocrystalline gallium oxide inclusions in traditional CMOS technology.
AbstractList A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO 2 /Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gallium and oxygen) on the chemical composition of implanted layers is reported. The separation of gallium profiles in the elemental and oxidized states is shown, even in the absence of post-implantation annealing. As a result of annealing, blue photoluminescence, associated with the recombination of donor–acceptor pairs (DAP) in Ga 2 O 3 nanocrystals, appears in the spectrum. The structural characterization by transmission electron microscopy confirms the formation of β-Ga 2 O 3 nanocrystals. The obtained results open up the possibility of using nanocrystalline gallium oxide inclusions in traditional CMOS technology.
A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO2/Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gallium and oxygen) on the chemical composition of implanted layers is reported. The separation of gallium profiles in the elemental and oxidized states is shown, even in the absence of post-implantation annealing. As a result of annealing, blue photoluminescence, associated with the recombination of donor–acceptor pairs (DAP) in Ga2O3 nanocrystals, appears in the spectrum. The structural characterization by transmission electron microscopy confirms the formation of β-Ga2O3 nanocrystals. The obtained results open up the possibility of using nanocrystalline gallium oxide inclusions in traditional CMOS technology.
Author Drozdov, Mikhail N
Mikhaylov, Alexey N
Matyunina, Kristina S
Nezhdanov, Alexey V
Kriukov, Ruslan N
Belov, Alexey I
Sushkov, Artem A
Nikolskaya, Alena A
Pavlov, Dmitry A
Korolev, Dmitry S
Tetelbaum, David I
Yunin, Pavel A
AuthorAffiliation 1 Research Institute of Physics and Technology, Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia; nikolskaya@nifti.unn.ru (A.A.N.); belov@nifti.unn.ru (A.I.B.); mian@nifti.unn.ru (A.N.M.); tetelbaum@phys.unn.ru (D.I.T.)
2 Department of Physics, Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia; matyunina.ks@gmail.com (K.S.M.); kriukov.ruslan@yandex.ru (R.N.K.); nezhdanov@phys.unn.ru (A.V.N.); sushkov@phys.unn.ru (A.A.S.); pavlov@unn.ru (D.A.P.); yunin@ipmras.ru (P.A.Y.)
3 Institute for Physics of Microstructure of the Russian Academy of Sciences (IPM RAS), 603950 Nizhny Novgorod, Russia; drm@ipm.sci-nnov.ru
AuthorAffiliation_xml – name: 1 Research Institute of Physics and Technology, Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia; nikolskaya@nifti.unn.ru (A.A.N.); belov@nifti.unn.ru (A.I.B.); mian@nifti.unn.ru (A.N.M.); tetelbaum@phys.unn.ru (D.I.T.)
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Snippet A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO2/Si dielectric matrix has been...
A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO 2 /Si dielectric matrix has been...
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StartPage 1840
SubjectTerms Annealing
Chemical composition
Chemical elements
Chemical synthesis
Crystals
Decomposition
Gallium
gallium oxide
Gallium oxides
Ion beams
Ion implantation
ion-beam synthesis
Irradiation
Nanocrystals
Nanomaterials
Nanostructured materials
Nanotechnology
Nonmetallic inclusions
Photoluminescence
Photons
Radiation
Recombination
Silicon compounds
Silicon dioxide
silicon oxide
Silicon wafers
Structural analysis
thermal annealing
Transmission electron microscopy
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Title Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix
URI https://www.proquest.com/docview/2674390430
https://search.proquest.com/docview/2675611280
https://pubmed.ncbi.nlm.nih.gov/PMC9182438
https://doaj.org/article/3860753ae2764b7483c354de9bc96814
Volume 12
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