In situ three-dimensional reciprocal-space mapping during mechanical deformation

Mechanical deformation of a SiGe island epitaxically grown on Si(001) was studied by a specially adapted atomic force microscope and nanofocused X‐ray diffraction. The deformation was monitored during in situ mechanical loading by recording three‐dimensional reciprocal‐space maps around a selected B...

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Published inJournal of synchrotron radiation Vol. 19; no. 5; pp. 688 - 694
Main Authors Cornelius, T. W., Davydok, A., Jacques, V. L. R., Grifone, R., Schülli, T., Richard, M.-I., Beutier, G., Verdier, M., Metzger, T. H., Pietsch, U., Thomas, O.
Format Journal Article
LanguageEnglish
Published 5 Abbey Square, Chester, Cheshire CH1 2HU, England International Union of Crystallography 01.09.2012
Subjects
3D reciprocal-space mapping
Beams (radiation)
Chemical Sciences
Deformation
energy scan
in situ AFM
Islands
Material chemistry
mechanical deformation/properties
nanofocused XRD
Nanostructure
Recording
Silicon germanides
Three dimensional
X-ray diffraction
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Abstract Mechanical deformation of a SiGe island epitaxically grown on Si(001) was studied by a specially adapted atomic force microscope and nanofocused X‐ray diffraction. The deformation was monitored during in situ mechanical loading by recording three‐dimensional reciprocal‐space maps around a selected Bragg peak. Scanning the energy of the incident beam instead of rocking the sample allowed the safe and reliable measurement of the reciprocal‐space maps without removal of the mechanical load. The crystal truncation rods originating from the island side facets rotate to steeper angles with increasing mechanical load. Simulations of the displacement field and the intensity distribution, based on the finite‐element method, reveal that the change in orientation of the side facets of about 25° corresponds to an applied pressure of 2–3 GPa on the island top plane.
AbstractList Mechanical deformation of a SiGe island epitaxically grown on Si(001) was studied by a specially adapted atomic force microscope and nanofocused X-ray diffraction. The deformation was monitored during in situ mechanical loading by recording three-dimensional reciprocal-space maps around a selected Bragg peak. Scanning the energy of the incident beam instead of rocking the sample allowed the safe and reliable measurement of the reciprocal-space maps without removal of the mechanical load. The crystal truncation rods originating from the island side facets rotate to steeper angles with increasing mechanical load. Simulations of the displacement field and the intensity distribution, based on the finite-element method, reveal that the change in orientation of the side facets of about 25° corresponds to an applied pressure of 2-3 GPa on the island top plane.
Mechanical deformation of a SiGe island epitaxically grown on Si(001) was studied by a specially adapted atomic force microscope and nanofocused X-ray diffraction. The deformation was monitored during in situ mechanical loading by recording three-dimensional reciprocal-space maps around a selected Bragg peak. Scanning the energy of the incident beam instead of rocking the sample allowed the safe and reliable measurement of the reciprocal-space maps without removal of the mechanical load. The crystal truncation rods originating from the island side facets rotate to steeper angles with increasing mechanical load. Simulations of the displacement field and the intensity distribution, based on the finite-element method, reveal that the change in orientation of the side facets of about 25 degrees corresponds to an applied pressure of 2-3 GPa on the island top plane.
Mechanical deformation of a SiGe island epitaxically grown on Si(001) was studied by a specially adapted atomic force microscope and nanofocused X-ray diffraction. The deformation was monitored during in situ mechanical loading by recording three-dimensional reciprocal-space maps around a selected Bragg peak. Scanning the energy of the incident beam instead of rocking the sample allowed the safe and reliable measurement of the reciprocal-space maps without removal of the mechanical load. The crystal truncation rods originating from the island side facets rotate to steeper angles with increasing mechanical load. Simulations of the displacement field and the intensity distribution, based on the finite-element method, reveal that the change in orientation of the side facets of about 25 degree corresponds to an applied pressure of 2-3GPa on the island top plane.
Author Jacques, V. L. R.
Richard, M.-I.
Cornelius, T. W.
Pietsch, U.
Verdier, M.
Thomas, O.
Grifone, R.
Schülli, T.
Metzger, T. H.
Beutier, G.
Davydok, A.
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Snippet Mechanical deformation of a SiGe island epitaxically grown on Si(001) was studied by a specially adapted atomic force microscope and nanofocused X‐ray...
Mechanical deformation of a SiGe island epitaxically grown on Si(001) was studied by a specially adapted atomic force microscope and nanofocused X-ray...
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SubjectTerms 3D reciprocal-space mapping
Beams (radiation)
Chemical Sciences
Deformation
energy scan
in situ AFM
Islands
Material chemistry
mechanical deformation/properties
nanofocused XRD
Nanostructure
Recording
Silicon germanides
Three dimensional
X-ray diffraction
Title In situ three-dimensional reciprocal-space mapping during mechanical deformation
URI https://api.istex.fr/ark:/67375/WNG-BC61VDXF-L/fulltext.pdf
https://onlinelibrary.wiley.com/doi/abs/10.1107%2FS0909049512023758
https://www.ncbi.nlm.nih.gov/pubmed/22898946
https://search.proquest.com/docview/1034201804
https://search.proquest.com/docview/1136338832
https://hal.science/hal-00747530
Volume 19
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