Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(111) substrate grown by MOCVD

• Published in: Physica status solidi. C Vol. 4; no. 7; pp. 2658 - 2661
• Main Authors: Iwami, Masayuki, Kato, Sadahiro, Satoh, Yoshihiro, Sasaki, Hitoshi, Yoshida, Seikoh
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.06.2007; WILEY‐VCH Verlag
• Subjects: 61.10.Nz; 61.72.Lk; 73.40.Kp; 73.61.Ey; 81.15.Gh; 85.30.Tv

The buffer breakdown voltage and the electron mobility in a two dimensional gas (2DEG) of AlGaN/GaN HFETs on 4 inch Si(111) substrates grown by metalorganic chemical vapor deposition was investigated. The relationship between the electrical properties of HFETs and the crystalline quality of the GaN...