Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing

• Published in: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Vol. 26; no. 1; pp. 286 - 292
• Main Authors: Vervisch, V., Etienne, H., Torregrosa, F., Roux, L., Ottaviani, L., Pasquinelli, M., Sarnet, T., Delaporte, P.
• Format: Journal Article
• Language: English
• Published: American Vacuum Society 01.01.2008; American Vacuum Society (AVS)
• Subjects: Engineering Sciences; BF3 plasma; n-type silicon

To achieve the requirements of the 45 nm ITRS technology node and beyond, beamline implantation has reached its limit in terms of low energies. Plasma immersion ion implantation (PIII) is thus an alternative doping technique for the formation of ultrashallow junctions for source/drain extension in s...