Asymmetric Phase Transitions Observed at the Interface of a Field-Effect Transistor Based on an Organic Mott Insulator

• Published in: European journal of inorganic chemistry Vol. 2014; no. 24; pp. 3841 - 3844
• Main Authors: Yamamoto, Hiroshi M., Kawasugi, Yoshitaka, Cui, Hengbo, Nakano, Masaki, Iwasa, Yoshihiro, Kato, Reizo
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 01.08.2014; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: Asymmetry; Channels; Conducting materials; Devices; Doping; Electric potential; Electron transport; Field effect transistors; Insulators; Organic electronics; Organic field-effect transistors; Phase transitions; Semiconductor devices; Transistors

A high‐quality field‐effect transistor (FET) with an organic Mott insulating channel was fabricated, and its low‐temperature transport properties were measured at various gate voltages (VG). The resistance of the FET showed a clear ambipolar field effect as well as a sudden drop in both the p‐type a...