Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors

• Published in: Nature communications Vol. 4; no. 1; p. 1588
• Main Authors: Lu, Guanghao, Blakesley, James, Himmelberger, Scott, Pingel, Patrick, Frisch, Johannes, Lieberwirth, Ingo, Salzmann, Ingo, Oehzelt, Martin, Di Pietro, Riccardo, Salleo, Alberto, Koch, Norbert, Neher, Dieter
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 12.03.2013; Nature Publishing Group
• Subjects: 639/301/119/995; 639/638/298/923/1028; Humanities and Social Sciences; multidisciplinary; Polymer blends; Polymers; R&D; Research & development; Science; Science (multidisciplinary); Spatial distribution; Transistors; United States > US; Berlin Germany; Massachusetts; Germany

Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transist...