Requirement for Suppression of Line Width Roughness in Fabrication of Line-and-Space Patterns with 7 nm Quarter-Pitch Using Electron Beam Lithography with Chemically Amplified Resist Process

• Published in: Journal of Photopolymer Science and Technology Vol. 29; no. 6; pp. 809 - 816
• Main Author: Kozawa, Takahiro
• Format: Journal Article
• Language: English
• Published: Hiratsuka The Society of Photopolymer Science and Technology(SPST) 01.01.2016; Japan Science and Technology Agency
• Subjects: chemically amplified resist; EB lithography; Electron beam lithography; line width roughness; Reaction mechanisms; sensitivity; sub-8 nm

The suppression of line width roughness (LWR) is the most difficult task in the development of resist materials used for sub-10 nm fabrication. We have investigated the feasibility of the fabrication of line-and-space patterns with 7 nm quarter-pitch (7 nm space width and 28 nm pitch) with a chemica...