Strain induced deep electronic states around threading dislocations in GaN

• Published in: Physical review letters Vol. 93; no. 19; p. 196401
• Main Authors: Lymperakis, L, Neugebauer, J, Albrecht, M, Remmele, T, Strunk, H P
• Format: Journal Article
• Language: English
• Published: United States 05.11.2004

Combining through-focus high-resolution transmission electron microscopy and hierarchical multiscale simulations consisting of density-functional theory, analytical empirical potentials, and continuum elastic theory we demonstrate the existence of a new dislocation type in GaN. In contrast with all...