Semiconductor to metal transition in bilayer phosphorene under normal compressive strain

• Published in: Nanotechnology Vol. 26; no. 7; pp. 75701 - 8
• Main Authors: Manjanath, Aaditya, Samanta, Atanu, Pandey, Tribhuwan, Singh, Abhishek K
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 20.02.2015
• Subjects: Carrier mobility; Compressive properties; DFT; Electric fields; Electronic properties; normal compressive strain; phosphorene; Semiconductors; Strain; Transport properties; Tuning
• ISSN: 0957-4484; 1361-6528; 1361-6528
• DOI: 10.1088/0957-4484/26/7/075701

Phosphorene, a two-dimensional analog of black phosphorous, has been a subject of immense interest recently, due to its high carrier mobilities and a tunable bandgap. So far, tunability has been predicted to be obtained with very high compressive/tensile in-plane strains, and vertical electric field...