APA (7th ed.) Citation

Zhang, Q., Gu, J., Xu, R., Cao, L., Li, J., Wu, Z., . . . Luo, J. (2021). Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices. Nanomaterials (Basel, Switzerland), 11(3), 646. https://doi.org/10.3390/nano11030646

Chicago Style (17th ed.) Citation

Zhang, Qingzhu, et al. "Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices." Nanomaterials (Basel, Switzerland) 11, no. 3 (2021): 646. https://doi.org/10.3390/nano11030646.

MLA (9th ed.) Citation

Zhang, Qingzhu, et al. "Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices." Nanomaterials (Basel, Switzerland), vol. 11, no. 3, 2021, p. 646, https://doi.org/10.3390/nano11030646.