Tailoring Mid‐Gap States of Chalcogenide Glass by Pressure‐Induced Hypervalent Bonding Towards the Design of Electrical Switching Materials

• Published in: Advanced functional materials Vol. 33; no. 45
• Main Authors: Xu, Meng, Xu, Qundao, Gu, Rongchuan, Wang, Songyou, Wang, Cai‐Zhuang, Ho, Kai‐Ming, Wang, Zhongrui, Xu, Ming, Miao, Xiangshui
• Format: Journal Article
• Language: English
• Published: Hoboken Wiley Subscription Services, Inc 01.11.2023; Wiley
• Subjects: chalcogenide glass; Chalcogenides; Chips (memory devices); Clusters; Covalent bonds; Electrons; hypervalent bonds; MATERIALS SCIENCE; mid-gap states; ovonic threshold switching; phase change memory; Switching

Phase change memory (PCM) and ovonic threshold switching (OTS) materials using chalcogenide glass are essential elements in advanced 3D memory chips. The mid‐gap states, induced by the disorder and defects in the glass, are the physical mechanisms of the electrical switching behavior, while the orig...