The Evolution of Manufacturing Technology for GaN Electronic Devices

• Published in: Micromachines (Basel) Vol. 12; no. 7; p. 737
• Main Authors: Liu, An-Chen, Tu, Po-Tsung, Langpoklakpam, Catherine, Huang, Yu-Wen, Chang, Ya-Ting, Tzou, An-Jye, Hsu, Lung-Hsing, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 23.06.2021; MDPI
• Subjects: 5G mobile communication; CMOS; CMOS-compatible Au-free process; Commercialization; Communication; Contact resistance; Efficiency; Electronic devices; Energy; Evolution; gallium nitride; Gallium nitrides; Gold; High electron mobility transistors; high-electron mobility transistor; Manufacturing; Metallizing; Millimeter waves; MIS (semiconductors); Power amplifiers; R&D; Radio frequency; Receivers & amplifiers; Research & development; Review; Transistors

GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-...