Selective Growth and Contact Gap-Fill of Low Resistivity Si via Microwave Plasma-Enhanced CVD

• Published in: Micromachines (Basel) Vol. 10; no. 10; p. 689
• Main Authors: Kim, Youngwan, Lee, Myoungwoo, Kim, Youn-Jea
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 12.10.2019; MDPI
• Subjects: Chemical vapor deposition; Decomposition; Doping; Dynamic random access memory; Electric contacts; Electric power; Electrical resistivity; Flow velocity; gap-fill process; Gas injection; Gases; Hydrogen; microwave plasma; Microwave plasmas; Phosphorus; Plasma; Plasma enhanced chemical vapor deposition; Random access memory; selective si growth; Temperature; Transistors; United States > US

Low resistivity polycrystalline Si could be selectively grown in the deep (~200 nm) and narrow patterns (~20 nm) of 20 nm pitch design rule DRAM (Dynamic Random Access Memory) by microwave plasma-enhanced chemical vapor deposition (MW-CVD). We were able to achieve the high phosphorus (CVD gap-fill i...