The Wafer-Level Integration of Single-Crystal LiNbO3 on Silicon via Polyimide Material
In situ measurements of sensing signals in space platforms requires that the micro-electro-mechanical system (MEMS) sensors be located directly at the point to be measured and in contact with the subject to be measured. Traditional radiation-tolerant silicon-based MEMS sensors cannot acquire spatial...
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| Published in | Micromachines (Basel) Vol. 12; no. 1; p. 70 |
|---|---|
| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
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Basel
MDPI AG
01.01.2021
MDPI |
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| Online Access | Get full text |
| ISSN | 2072-666X 2072-666X |
| DOI | 10.3390/mi12010070 |
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| Abstract | In situ measurements of sensing signals in space platforms requires that the micro-electro-mechanical system (MEMS) sensors be located directly at the point to be measured and in contact with the subject to be measured. Traditional radiation-tolerant silicon-based MEMS sensors cannot acquire spatial signals directly. Compared to silicon-based structures, LiNbO3 single crystalline has wide application prospects in the aerospace field owing to its excellent corrosion resistance, low-temperature resistance and radiation resistance. In our work, 4-inch LiNbO3 and LiNbO3/Cr/Au wafers are fabricated to silicon substrate by means of a polyimide bonding method, respectively. The low-temperature bonding process (≤100 °C) is also useful for heterostructure to avoid wafer fragmentation results from a coefficient of thermal expansion (CTE) mismatch. The hydrophilic polyimide surfaces result from the increasing of -OH groups were acquired based on contact angle and X-ray photoelectron spectroscopy characterizations. A tight and defect-free bonding interface was confirmed by scanning electron microscopy. More importantly, benefiting from low-temperature tolerance and radiation-hardened properties of polyimide material, the bonding strength of the heterostructure based on oxygen plasma activation achieved 6.582 MPa and 3.339 MPa corresponding to room temperature and ultra-low temperature (≈ −263.15 °C), which meets the bonding strength requirements of aerospace applications. |
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| AbstractList | In situ measurements of sensing signals in space platforms requires that the micro-electro-mechanical system (MEMS) sensors be located directly at the point to be measured and in contact with the subject to be measured. Traditional radiation-tolerant silicon-based MEMS sensors cannot acquire spatial signals directly. Compared to silicon-based structures, LiNbO3 single crystalline has wide application prospects in the aerospace field owing to its excellent corrosion resistance, low-temperature resistance and radiation resistance. In our work, 4-inch LiNbO3 and LiNbO3/Cr/Au wafers are fabricated to silicon substrate by means of a polyimide bonding method, respectively. The low-temperature bonding process ( ≤ ≤ 100 °C) is also useful for heterostructure to avoid wafer fragmentation results from a coefficient of thermal expansion (CTE) mismatch. The hydrophilic polyimide surfaces result from the increasing of -OH groups were acquired based on contact angle and X-ray photoelectron spectroscopy characterizations. A tight and defect-free bonding interface was confirmed by scanning electron microscopy. More importantly, benefiting from low-temperature tolerance and radiation-hardened properties of polyimide material, the bonding strength of the heterostructure based on oxygen plasma activation achieved 6.582 MPa and 3.339 MPa corresponding to room temperature and ultra-low temperature ( ≈ ≈ −263.15 °C), which meets the bonding strength requirements of aerospace applications. In situ measurements of sensing signals in space platforms requires that the micro-electro-mechanical system (MEMS) sensors be located directly at the point to be measured and in contact with the subject to be measured. Traditional radiation-tolerant silicon-based MEMS sensors cannot acquire spatial signals directly. Compared to silicon-based structures, LiNbO3 single crystalline has wide application prospects in the aerospace field owing to its excellent corrosion resistance, low-temperature resistance and radiation resistance. In our work, 4-inch LiNbO3 and LiNbO3/Cr/Au wafers are fabricated to silicon substrate by means of a polyimide bonding method, respectively. The low-temperature bonding process ( ≤ 100 °C) is also useful for heterostructure to avoid wafer fragmentation results from a coefficient of thermal expansion (CTE) mismatch. The hydrophilic polyimide surfaces result from the increasing of -OH groups were acquired based on contact angle and X-ray photoelectron spectroscopy characterizations. A tight and defect-free bonding interface was confirmed by scanning electron microscopy. More importantly, benefiting from low-temperature tolerance and radiation-hardened properties of polyimide material, the bonding strength of the heterostructure based on oxygen plasma activation achieved 6.582 MPa and 3.339 MPa corresponding to room temperature and ultra-low temperature ( ≈ −263.15 °C), which meets the bonding strength requirements of aerospace applications. In situ measurements of sensing signals in space platforms requires that the micro-electro-mechanical system (MEMS) sensors be located directly at the point to be measured and in contact with the subject to be measured. Traditional radiation-tolerant silicon-based MEMS sensors cannot acquire spatial signals directly. Compared to silicon-based structures, LiNbO3 single crystalline has wide application prospects in the aerospace field owing to its excellent corrosion resistance, low-temperature resistance and radiation resistance. In our work, 4-inch LiNbO3 and LiNbO3/Cr/Au wafers are fabricated to silicon substrate by means of a polyimide bonding method, respectively. The low-temperature bonding process (≤100 °C) is also useful for heterostructure to avoid wafer fragmentation results from a coefficient of thermal expansion (CTE) mismatch. The hydrophilic polyimide surfaces result from the increasing of -OH groups were acquired based on contact angle and X-ray photoelectron spectroscopy characterizations. A tight and defect-free bonding interface was confirmed by scanning electron microscopy. More importantly, benefiting from low-temperature tolerance and radiation-hardened properties of polyimide material, the bonding strength of the heterostructure based on oxygen plasma activation achieved 6.582 MPa and 3.339 MPa corresponding to room temperature and ultra-low temperature (≈ -263.15 °C), which meets the bonding strength requirements of aerospace applications.In situ measurements of sensing signals in space platforms requires that the micro-electro-mechanical system (MEMS) sensors be located directly at the point to be measured and in contact with the subject to be measured. Traditional radiation-tolerant silicon-based MEMS sensors cannot acquire spatial signals directly. Compared to silicon-based structures, LiNbO3 single crystalline has wide application prospects in the aerospace field owing to its excellent corrosion resistance, low-temperature resistance and radiation resistance. In our work, 4-inch LiNbO3 and LiNbO3/Cr/Au wafers are fabricated to silicon substrate by means of a polyimide bonding method, respectively. The low-temperature bonding process (≤100 °C) is also useful for heterostructure to avoid wafer fragmentation results from a coefficient of thermal expansion (CTE) mismatch. The hydrophilic polyimide surfaces result from the increasing of -OH groups were acquired based on contact angle and X-ray photoelectron spectroscopy characterizations. A tight and defect-free bonding interface was confirmed by scanning electron microscopy. More importantly, benefiting from low-temperature tolerance and radiation-hardened properties of polyimide material, the bonding strength of the heterostructure based on oxygen plasma activation achieved 6.582 MPa and 3.339 MPa corresponding to room temperature and ultra-low temperature (≈ -263.15 °C), which meets the bonding strength requirements of aerospace applications. In situ measurements of sensing signals in space platforms requires that the micro-electro-mechanical system (MEMS) sensors be located directly at the point to be measured and in contact with the subject to be measured. Traditional radiation-tolerant silicon-based MEMS sensors cannot acquire spatial signals directly. Compared to silicon-based structures, LiNbO 3 single crystalline has wide application prospects in the aerospace field owing to its excellent corrosion resistance, low-temperature resistance and radiation resistance. In our work, 4-inch LiNbO 3 and LiNbO 3 /Cr/Au wafers are fabricated to silicon substrate by means of a polyimide bonding method, respectively. The low-temperature bonding process ( ≤ 100 °C) is also useful for heterostructure to avoid wafer fragmentation results from a coefficient of thermal expansion (CTE) mismatch. The hydrophilic polyimide surfaces result from the increasing of -OH groups were acquired based on contact angle and X-ray photoelectron spectroscopy characterizations. A tight and defect-free bonding interface was confirmed by scanning electron microscopy. More importantly, benefiting from low-temperature tolerance and radiation-hardened properties of polyimide material, the bonding strength of the heterostructure based on oxygen plasma activation achieved 6.582 MPa and 3.339 MPa corresponding to room temperature and ultra-low temperature ( ≈ −263.15 °C), which meets the bonding strength requirements of aerospace applications. In situ measurements of sensing signals in space platforms requires that the micro-electro-mechanical system (MEMS) sensors be located directly at the point to be measured and in contact with the subject to be measured. Traditional radiation-tolerant silicon-based MEMS sensors cannot acquire spatial signals directly. Compared to silicon-based structures, LiNbO3 single crystalline has wide application prospects in the aerospace field owing to its excellent corrosion resistance, low-temperature resistance and radiation resistance. In our work, 4-inch LiNbO3 and LiNbO3/Cr/Au wafers are fabricated to silicon substrate by means of a polyimide bonding method, respectively. The low-temperature bonding process (≤100 °C) is also useful for heterostructure to avoid wafer fragmentation results from a coefficient of thermal expansion (CTE) mismatch. The hydrophilic polyimide surfaces result from the increasing of -OH groups were acquired based on contact angle and X-ray photoelectron spectroscopy characterizations. A tight and defect-free bonding interface was confirmed by scanning electron microscopy. More importantly, benefiting from low-temperature tolerance and radiation-hardened properties of polyimide material, the bonding strength of the heterostructure based on oxygen plasma activation achieved 6.582 MPa and 3.339 MPa corresponding to room temperature and ultra-low temperature (≈ −263.15 °C), which meets the bonding strength requirements of aerospace applications. |
| Author | Yang, Xiangyu Bi, Kaixi Mu, Jiliang Hou, Xiaojuan Geng, Wenping Mei, Linyu He, Jian Chou, Xiujian Li, Yaqing |
| AuthorAffiliation | 1 Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Taiyuan 030051, China; s1806068@st.nuc.edu.cn (X.Y.); bikaixi@nuc.edu.cn (K.B.); s1806120@st.nuc.edu.cn (Y.L.); drhejian@nuc.edu.cn (J.H.); mujiliang@nuc.edu.cn (J.M.); houxiaojuan@nuc.edu.cn (X.H.); chouxiujian@nuc.edu.cn (X.C.) 2 School of Mechanical Engineering, North University of China, Taiyuan 030051, China; mly81@163.com |
| AuthorAffiliation_xml | – name: 1 Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Taiyuan 030051, China; s1806068@st.nuc.edu.cn (X.Y.); bikaixi@nuc.edu.cn (K.B.); s1806120@st.nuc.edu.cn (Y.L.); drhejian@nuc.edu.cn (J.H.); mujiliang@nuc.edu.cn (J.M.); houxiaojuan@nuc.edu.cn (X.H.); chouxiujian@nuc.edu.cn (X.C.) – name: 2 School of Mechanical Engineering, North University of China, Taiyuan 030051, China; mly81@163.com |
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| CitedBy_id | crossref_primary_10_1016_j_matdes_2022_110447 crossref_primary_10_1016_j_jmst_2021_11_040 crossref_primary_10_1021_acsami_4c08823 crossref_primary_10_1007_s10404_022_02579_3 |
| Cites_doi | 10.1063/1.2185467 10.1016/j.apsusc.2007.02.112 10.1016/j.apsusc.2009.09.002 10.1016/S0169-4332(00)00739-X 10.1117/1.3152362 10.1016/j.surfcoat.2007.08.046 10.1063/1.4966547 10.1039/C7RA08854J 10.1021/la9001972 10.1016/j.apsusc.2018.09.174 10.1109/23.556915 10.1038/nature12314 10.1002/adma.200502364 10.1149/1.3560510 10.1016/0022-3115(80)90028-8 10.1143/JJAP.45.3822 10.13182/NT77-A31961 10.1016/j.progpolymsci.2012.02.005 10.1016/j.surfcoat.2011.04.016 10.1002/1097-4628(20001031)78:5<979::AID-APP60>3.0.CO;2-U 10.1016/j.snb.2010.06.070 10.1109/TNS.2018.2828300 10.1016/j.nimb.2020.03.007 10.1088/0960-1317/11/4/311 10.1109/TED.2019.2957880 10.1049/el:19870845 10.1016/j.apsusc.2017.10.184 10.1016/j.surfcoat.2005.09.028 10.1364/OL.40.001258 10.1016/S0257-8972(01)01315-9 10.1109/TNS.2008.2001409 10.7567/JJAP.56.088002 10.1002/(SICI)1096-9918(199902)27:2<103::AID-SIA477>3.0.CO;2-1 |
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| SubjectTerms | Bonding strength Contact angle Corrosion resistance Curing Dielectric properties Gamma rays Heterostructures In situ measurement Interfaces LiNbO3 single crystalline Lithium Lithium niobates Low temperature resistance low-temperature bonding low-temperature tolerance Mechanical systems Methods Microelectromechanical systems Oxygen plasma oxygen plasma activation Photoelectrons Plasma polyimide material Radiation hardening Radiation tolerance radiation-hardened properties Room temperature Sensors Silicon substrates Silicon wafers Single crystals Space stations Thermal expansion |
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| Title | The Wafer-Level Integration of Single-Crystal LiNbO3 on Silicon via Polyimide Material |
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