Selectivity enhancement of SiC-FET gas sensors by combining temperature and gate bias cycled operation using multivariate statistics

• Published in: Sensors and actuators. B, Chemical Vol. 193; pp. 931 - 940
• Main Authors: Bur, Christian, Bastuck, Manuel, Lloyd Spetz, Anita, Andersson, Mike, Schütze, Andreas
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2014
• Subjects: Bias; Cycles; Feature extraction; Field effect transistors; Gate bias modulation; Gates; Modulation; Pattern recognition; Selectivity; Sensors; SiC-FET; Statistics; TECHNOLOGY; TEKNIKVETENSKAP; Temperature modulation; Feature extraction; SiC-FET; Gate bias modulation; Selectivity; Pattern recognition; Temperature modulation

•Combination of temperature and gate bias modulation is presented.•Significant features describing the shape of the sensor response have been selected.•Linear Discriminant Analysis (LDA) is used for data evaluation.•Selectivity of the sensor can be increased by our suggested approach.•Discrimination...