Qiu, C., Zhang, Z., Xiao, M., Yang, Y., Zhong, D., & Peng, L. (2017). Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science (American Association for the Advancement of Science), 355(6322), 271-276. https://doi.org/10.1126/science.aaj1628
Chicago Style (17th ed.) CitationQiu, Chenguang, Zhiyong Zhang, Mengmeng Xiao, Yingjun Yang, Donglai Zhong, and Lian-Mao Peng. "Scaling Carbon Nanotube Complementary Transistors to 5-nm Gate Lengths." Science (American Association for the Advancement of Science) 355, no. 6322 (2017): 271-276. https://doi.org/10.1126/science.aaj1628.
MLA (9th ed.) CitationQiu, Chenguang, et al. "Scaling Carbon Nanotube Complementary Transistors to 5-nm Gate Lengths." Science (American Association for the Advancement of Science), vol. 355, no. 6322, 2017, pp. 271-276, https://doi.org/10.1126/science.aaj1628.