A CMOS PSR Enhancer with 87.3 mV PVT-Insensitive Dropout Voltage for Sensor Circuits

• Published in: Sensors (Basel, Switzerland) Vol. 21; no. 23; p. 7856
• Main Authors: Zhang, Jianyu, Chan, Pak Kwong
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 25.11.2021; MDPI
• Subjects: Analog circuits; Circuits; current reference; Design; dropout voltage; Electric potential; Floating bridges; Noise sensitivity; Operational amplifiers; PSR enhancer; regulator; Sensors; Simulation; Temperature; Temperature compensation; Transistors; Voltage; voltage reference

A new power supply rejection (PSR) based enhancer with small and stable dropout voltage is presented in this work. It is implemented using TSMC-40 nm process technology and powered by 1.2 V supply voltage. A number of circuit techniques are proposed in this work. These include the temperature compen...