Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface
•Samples prepared by high fluence, low-energy PIII of AsH3+ on Si(100) were studied.•PIII is of high technological interest for ultra-shallow doping and activation.•We used a multi-technique approach to study the As-implanted surface.•We show that PIII presents a new set of problems that needs to be...
Saved in:
Published in | Applied surface science Vol. 355; no. C; pp. 792 - 799 |
---|---|
Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Netherlands
Elsevier B.V
01.11.2015
Elsevier |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!