Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

• Published in: Applied surface science Vol. 355; no. C; pp. 792 - 799
• Main Authors: Vishwanath, V., Demenev, E., Giubertoni, D., Vanzetti, L., Koh, A.L., Steinhauser, G., Pepponi, G., Bersani, M., Meirer, F., Foad, M.A.
• Format: Journal Article
• Language: English
• Published: Netherlands Elsevier B.V 01.11.2015; Elsevier
• Subjects: Arsenic; Arsenic implantation; As-implanted silicon; Deposition; Enhanced oxidation; Exposure; Fluence; Immersion; Low energy; Plasma immersion ion implantation (PIII); Silicon; Silicon oxides; Arsenic implantation; Plasma immersion ion implantation (PIII); Arsenic; As-implanted silicon; Enhanced oxidation

•Samples prepared by high fluence, low-energy PIII of AsH3+ on Si(100) were studied.•PIII is of high technological interest for ultra-shallow doping and activation.•We used a multi-technique approach to study the As-implanted surface.•We show that PIII presents a new set of problems that needs to be...