Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires

• Published in: Journal of physics. D, Applied physics Vol. 43; no. 44; p. 445402
• Main Authors: Paiman, S, Gao, Q, Joyce, H J, Kim, Y, Tan, H H, Jagadish, C, Zhang, X, Guo, Y, Zou, J
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 10.11.2010; Institute of Physics
• Subjects: Chemical synthesis methods; Chemical vapor deposition; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal structure; Crystallography; Exact sciences and technology; Indium phosphides; Materials science; Methods of nanofabrication; Morphology; Nanoscale materials and structures: fabrication and characterization; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; Nanowires; Phases; Physics; Quantum wires; Structure of solids and liquids; crystallography; Wurtzite; Blende structure; MOCVD; III-V compound; Indium phosphide; Growth mechanism; Wurtzite structure; Nanowires; Microstructure; Crystal morphology; Nanostructured materials; Nanomaterial synthesis; III-V semiconductors; Crystal structure
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/43/44/445402

The effects of growth temperature and V/III ratio on the morphology and crystallographic phases of InP nanowires that are grown by metal organic chemical vapour deposition have been studied. We show that higher growth temperatures or higher V/III ratios promote the formation of wurtzite nanowires while zinc-blende nanowires are favourable at lower growth temperatures and lower V/III ratios. A schematic map of distribution of zinc-blende and wurtzite structures has been developed in the range of growth temperatures (400–510 °C) and V/III ratios (44 to 700) investigated in this study.