Excimer laser electrochemical etching n-Si in the KOH solution
To further understand the behavior of laser-induced electrochemical etching process, the experiments of micromachining silicon by laser-induced electrochemical etching were carried out. 248 nm excimer laser as light source was adopted in this work with the power of 10 9 W/cm 2 for the first time and...
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Published in | Optics and lasers in engineering Vol. 48; no. 5; pp. 570 - 574 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Kidlington
Elsevier Ltd
01.05.2010
Elsevier |
Subjects | |
Online Access | Get full text |
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