Excimer laser electrochemical etching n-Si in the KOH solution

To further understand the behavior of laser-induced electrochemical etching process, the experiments of micromachining silicon by laser-induced electrochemical etching were carried out. 248 nm excimer laser as light source was adopted in this work with the power of 10 9 W/cm 2 for the first time and...

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Bibliographic Details
Published inOptics and lasers in engineering Vol. 48; no. 5; pp. 570 - 574
Main Authors Long, Yuhong, Shi, Tielin, Xiong, Liangcai
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier Ltd 01.05.2010
Elsevier
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