Effect of photocatalytic oxidation technology on GaN CMP

• Published in: Applied surface science Vol. 361; pp. 18 - 24
• Main Authors: Wang, Jie, Wang, Tongqing, Pan, Guoshun, Lu, Xinchun
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.01.2016
• Subjects: Catalysis; Catalysts; Chemical mechanical polishing; Gallium nitrides; GaN; H2O2–SiO2-based slurry; Mathematical models; Mechanism; Oxidation; Photocatalysis; Photocatalytic oxidation; Titanium dioxide; H2O2–SiO2-based slurry; GaN; Chemical mechanical polishing; Photocatalytic oxidation; Mechanism

•Photocatalytic oxidation technology was introduced to GaN CMP for the first time and proves to be more efficient than before.•XPS analysis reveals the planarization process by different N-type semiconductor particles.•Analyzing the effect of pH on photocatalytic oxidation in GaN CMP.•Proposing the...