Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature

• Published in: Scientific reports Vol. 7; no. 1; pp. 14146 - 8
• Main Authors: Lee, Hyung-Ik, Park, Jong-Bong, Xianyu, Wenxu, Kim, Kihong, Chung, Jae Gwan, Kyoung, Yong Koo, Byun, Sunjung, Yang, Woo Young, Park, Yong Young, Kim, Seong Min, Cho, Eunae, Shin, Jai Kwang
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 26.10.2017; Nature Publishing Group
• Subjects: 639/301/357/537; 639/301/930/12; 639/925/930/12; Electron microscopy; Humanities and Social Sciences; Hydrogenation; Low temperature; multidisciplinary; Oxygen; Porosity; Science; Science (multidisciplinary); Silicon; Spectroscopy; Temperature effects; Transmission electron microscopy; Water vapor

We report on the degradation process by water vapor of hydrogenated amorphous silicon oxynitride (SiON:H) films deposited by plasma-enhanced chemical vapor deposition at low temperature. The stability of the films was investigated as a function of the oxygen content and deposition temperature. Degra...