Determination of ZnO temperature coefficients using thin film bulk acoustic wave resonators
Thin film bulk acoustic wave (BAW) resonators have been the subject of research in RF microelectronics for some time. Much of the interest lay in utilizing the resonators to design filters for wireless applications. Some of the major advantages BAW devices present over other filter technologies in u...
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Published in | IEEE transactions on ultrasonics, ferroelectrics, and frequency control Vol. 49; no. 11; pp. 1491 - 1496 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
United States
IEEE
01.11.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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Abstract | Thin film bulk acoustic wave (BAW) resonators have been the subject of research in RF microelectronics for some time. Much of the interest lay in utilizing the resonators to design filters for wireless applications. Some of the major advantages BAW devices present over other filter technologies in use today include size reduction and the possibility of on-chip integration. As the technology matures, the necessity to more fully characterize the performance of the devices and to develop more accurate models describing their behavior is apparent. In this investigation, the effects that temperature variations have on 1.8-2.0 GHz zinc oxide (ZnO)-based solidly mounted BAW resonators (SMRs) are studied. The average temperature coefficients of the series and parallel resonant frequencies of the fabricated devices are found to be -31.5 ppm//spl deg/C and -35.3 ppm//spl deg/C, respectively. The slight decrease in separation between the two resonant frequencies with temperature implies there is slightly less effective coupling with increased temperature. No definite trend is found describing the behavior of the quality factor (Q) of the resonator with temperature variations. With little temperature coefficient data for thin film ZnO available in the literature, the importance of an accurate model is evident. The resonator device performance is simulated using Ballato's electronic circuit model for acoustic devices on a SPICE-based platform. By virtue of the comparison between the predicted and measured device response, various material parameters are extracted. |
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AbstractList | Thin film bulk acoustic wave (BAW) resonators have been the subject of research in RF microelectronics for some time. Much of the interest lay in utilizing the resonators to design filters for wireless applications. Some of the major advantages BAW devices present over other filter technologies in use today include size reduction and the possibility of on-chip integration. As the technology matures, the necessity to more fully characterize the performance of the devices and to develop more accurate models describing their behavior is apparent. In this investigation, the effects that temperature variations have on 1.8-2.0 GHz zinc oxide (ZnO)-based solidly mounted BAW resonators (SMRs) are studied. The average temperature coefficients of the series and parallel resonant frequencies of the fabricated devices are found to be -31.5 ppm/degrees C and -35.3 ppm/degrees C, respectively. The slight decrease in separation between the two resonant frequencies with temperature implies there is slightly less effective coupling with increased temperature. No definite trend is found describing the behavior of the quality factor (Q) of the resonator with temperature variations. With little temperature coefficient data for thin film ZnO available in the literature, the importance of an accurate model is evident. The resonator device performance is simulated using Ballato's electronic circuit model for acoustic devices on a SPICE-based platform. By virtue of the comparison between the predicted and measured device response, various material parameters are extracted. Thin film bulk acoustic wave (BAW) resonators have been the subject of research in RF microelectronics for some time. Much of the interest lay in utilizing the resonators to design filters for wireless applications. Some of the major advantages BAW devices present over other filter technologies in use today include size reduction and the possibility of on-chip integration. As the technology matures, the necessity to more fully characterize the performance of the devices and to develop more accurate models describing their behavior is apparent. In this investigation, the effects that temperature variations have on 1.8-2.0 GHz zinc oxide (ZnO)-based solidly mounted BAW resonators (SMRs) are studied. The average temperature coefficients of the series and parallel resonant frequencies of the fabricated devices are found to be -31.5 ppm/ degree C and -35.3 ppm/ degree C, respectively. The slight decrease in separation between the two resonant frequencies with temperature implies there is slightly less effective coupling with increased temperature. No definite trend is found describing the behavior of the quality factor (Q) of the resonator with temperature variations. With little temperature coefficient data for thin film ZnO available in the literature, the importance of an accurate model is evident. The resonator device performance is simulated using Ballato's electronic circuit model for acoustic devices on a SPICE-based platform. By virtue of the comparison between the predicted and measured device response, various material parameters are extracted. Thin film bulk acoustic wave (BAW) resonators have been the subject of research in RF microelectronics for some time. Much of the interest lay in utilizing the resonators to design filters for wireless applications. Some of the major advantages BAW devices present over other filter technologies in use today include size reduction and the possibility of on-chip integration. As the technology matures, the necessity to more fully characterize the performance of the devices and to develop more accurate models describing their behavior is apparent. In this investigation, the effects that temperature variations have on 1.8-2.0 GHz zinc oxide (ZnO)-based solidly mounted BAW resonators (SMRs) are studied. The average temperature coefficients of the series and parallel resonant frequencies of the fabricated devices are found to be -31.5 ppm//spl deg/C and -35.3 ppm//spl deg/C, respectively. The slight decrease in separation between the two resonant frequencies with temperature implies there is slightly less effective coupling with increased temperature. No definite trend is found describing the behavior of the quality factor (Q) of the resonator with temperature variations. With little temperature coefficient data for thin film ZnO available in the literature, the importance of an accurate model is evident. The resonator device performance is simulated using Ballato's electronic circuit model for acoustic devices on a SPICE-based platform. By virtue of the comparison between the predicted and measured device response, various material parameters are extracted. Thin film bulk acoustic wave (BAW) resonators have been the subject of research in RF microelectronics for some time. Much of the interest lay in utilizing the resonators to design filters for wireless applications. Some of the major advantages BAW devices present over other filter technologies in use today include size reduction and the possibility of on-chip integration. As the technology matures, the necessity to more fully characterize the performance of the devices and to develop more accurate models describing their behavior is apparent. In this investigation, the effects that temperature variations have on 1.8-2.0 GHz zinc oxide (ZnO)-based solidly mounted BAW resonators (SMRs) are studied. The average temperature coefficients of the series and parallel resonant frequencies of the fabricated devices are found to be -31.5 ppm/ deg C and -35.3 ppm/ deg C, respectively. The slight decrease in separation between the two resonant frequencies with temperature implies there is slightly less effective coupling with increased temperature. No definite trend is found describing the behavior of the quality factor (Q) of the resonator with temperature variations. With little temperature coefficient data for thin film ZnO available in the literature, the importance of an accurate model is evident. The resonator device performance is simulated using Ballato's electronic circuit model for acoustic devices on a SPICE-based platform. By virtue of the comparison between the predicted and measured device response, various material parameters are extracted. |
Author | Hunt, W.D. Gammel, P.L. Barber, B.P. Pinkett, S.L. |
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Cites_doi | 10.1109/FREQ.1974.200032 10.1109/FREQ.1997.638779 10.1109/22.475658 10.1109/22.260698 10.1109/T-SU.1985.31647 |
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References | ono (ref8) 1977; 3 ref7 ref3 ref6 lakin (ref2) 2000 touloukian (ref10) 1975; 12 ref1 ballato (ref5) 1974 rosenbaum (ref4) 1988 touloukian (ref11) 1977; 13 simmons (ref9) 1971 |
References_xml | – start-page: 7 year: 1971 ident: ref9 publication-title: Single Crystal Elastic Constants and Calculated Aggregate Properties A Handbook contributor: fullname: simmons – volume: 13 year: 1977 ident: ref11 publication-title: Thermophysical Properties of Matter contributor: fullname: touloukian – start-page: 270 year: 1974 ident: ref5 article-title: bulk and surface acoustic wave excitation and network representation publication-title: 28th Annual Symposium on Frequency Control doi: 10.1109/FREQ.1974.200032 contributor: fullname: ballato – start-page: 371 year: 1988 ident: ref4 publication-title: Bulk Acoustic Wave Theory and Devices contributor: fullname: rosenbaum – volume: 12 start-page: 2 year: 1975 ident: ref10 publication-title: Thermophysical Properties of Matter contributor: fullname: touloukian – start-page: 855 year: 2000 ident: ref2 article-title: Temperature compensated bulk acoustic thin film resonators publication-title: Proc IEEE Ultrason Symp contributor: fullname: lakin – ident: ref6 doi: 10.1109/FREQ.1997.638779 – volume: 3 start-page: 35 year: 1977 ident: ref8 article-title: Surface-acoustic-wave properties in ZnO-SiO2-Si layered structure publication-title: Wave Electron contributor: fullname: ono – ident: ref1 doi: 10.1109/22.475658 – ident: ref3 doi: 10.1109/22.260698 – ident: ref7 doi: 10.1109/T-SU.1985.31647 |
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SubjectTerms | Acoustic waves Acoustics Acoustics - instrumentation Aluminum - chemistry Aluminum Compounds - chemistry Bulk acoustic wave devices Computer simulation Devices Electric Impedance Electrochemistry Equipment Design Materials Testing - instrumentation Materials Testing - methods Mathematical models Microelectronics Microwaves Models, Chemical Models, Theoretical Q factor Radio frequency Resonant frequencies Resonant frequency Resonator filters Resonators Silicon - chemistry Silicon Dioxide - chemistry Temperature Thin films Transistors Zinc oxide Zinc Oxide - chemistry |
Title | Determination of ZnO temperature coefficients using thin film bulk acoustic wave resonators |
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