E-mode All-GaN-Integrated cascode MISHEMT with GaN/InAlGaN/GaN backbarrier for high power switching performance: Simulation study
Saved in:
Published in | Micro and nanostructures (2022) Vol. 164; p. 107118 |
---|---|
Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
01.04.2022
|
Online Access | Get full text |
Cover
Loading…
ArticleNumber | 107118 |
---|---|
Author | Saxena, Manoj Kumari, Vandana Gupta, Mridula Singh, Preeti |
Author_xml | – sequence: 1 givenname: Preeti surname: Singh fullname: Singh, Preeti – sequence: 2 givenname: Vandana surname: Kumari fullname: Kumari, Vandana – sequence: 3 givenname: Manoj surname: Saxena fullname: Saxena, Manoj – sequence: 4 givenname: Mridula surname: Gupta fullname: Gupta, Mridula |
BookMark | eNp9kL1uwjAQx62KSqWUF-jkFwjYToJNN4QoRKLtAJ2ji-MQ03zJNkKMffM6pUPVocPpPv-nu989GjRtoxB6pGRCCZ1NjxPb1XrCCKO-wCkVN2jIOA8DQlk4-BXfobG1R0JIyHw2i4focxXUba7woqqCNbwGSePUwYBTOZZgZd96SXab1csen7UrsZ-ZJs2i6r03nIH8yMAYrQwuWoNLfShx1559ar1Alro54E4Z36uhkeoJ73R9qsDptsHWnfLLA7otoLJq_ONH6P15tV9ugu3bOlkutoGMIuICISL_K6OEgZhnsYiLjBTzOOdEhJTHSoYyl5HnAQI4l7mAaEY5FCLLWKxiHo6QuO6VprXWqCKV2n3f4QzoKqUk7Wmmx7SnmfY00ytNL2V_pJ3RNZjLf6IvrCB7sw |
CitedBy_id | crossref_primary_10_1007_s11664_024_11672_y crossref_primary_10_1109_TED_2024_3430251 crossref_primary_10_1007_s11664_024_11100_1 crossref_primary_10_1109_ACCESS_2023_3277200 crossref_primary_10_1016_j_micrna_2024_207815 |
Cites_doi | 10.1063/1.126940 10.1109/TPEL.2015.2398856 10.1016/j.microrel.2019.113517 10.1109/LED.2008.2000607 10.1088/0268-1242/25/7/075013 10.1016/j.spmi.2020.106497 10.1063/1.4907675 10.1109/TIA.2013.2255252 10.1109/TED.2011.2112771 10.3938/jkps.67.654 10.1002/pssa.201900115 10.1109/JEDS.2018.2807185 10.1109/TPS.2014.2312398 10.1109/TED.2018.2867874 10.1016/j.jallcom.2015.12.031 10.1109/TED.2014.2385062 10.1109/TPEL.2016.2643499 10.1109/TPEL.2013.2276127 10.1063/1.3456561 10.1016/j.sse.2019.107649 10.1109/TED.2018.2832250 10.1149/05804.0145ecst 10.1109/TPEL.2013.2267804 10.1016/j.spmi.2018.04.022 10.1149/2.0131712jss 10.1109/TIA.2015.2391439 10.1109/JEDS.2018.2859769 10.1007/s10825-020-01604-4 10.1080/02564602.2018.1450652 10.1109/TIA.2012.2200227 10.1109/TPEL.2019.2947274 10.1016/j.spmi.2018.04.041 10.1109/ACCESS.2019.2958059 10.1016/j.jcrysgro.2013.07.017 10.1109/TED.2018.2857774 10.1016/j.spmi.2018.09.005 10.1109/TED.2019.2901719 10.1109/TED.2005.862702 10.1016/j.spmi.2012.11.020 10.1142/S021797921950190X 10.1016/j.spmi.2020.106574 10.1002/pssb.201700394 |
ContentType | Journal Article |
DBID | AAYXX CITATION |
DOI | 10.1016/j.spmi.2021.107118 |
DatabaseName | CrossRef |
DatabaseTitle | CrossRef |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Physics |
EISSN | 2773-0123 |
ExternalDocumentID | 10_1016_j_spmi_2021_107118 |
GroupedDBID | 0R~ AALRI AATTM AAXKI AAXUO AAYWO AAYXX ABJNI ACRLP AEIPS AEZYN AFJKZ AFRZQ AFXIZ AGRNS AIIUN AIKHN AITUG ALMA_UNASSIGNED_HOLDINGS AMRAJ ANKPU APXCP BNPGV CITATION EBS FDB FYGXN M41 ROL SPC SSH SSM SSQ |
ID | FETCH-LOGICAL-c440t-8840162102a89b585fb0f95d7083175ec3cdc4101a8a77cd8a4617af8bb25e573 |
ISSN | 2773-0123 |
IngestDate | Thu Apr 24 23:02:48 EDT 2025 Tue Jul 01 00:38:54 EDT 2025 |
IsPeerReviewed | true |
IsScholarly | true |
Language | English |
LinkModel | OpenURL |
MergedId | FETCHMERGED-LOGICAL-c440t-8840162102a89b585fb0f95d7083175ec3cdc4101a8a77cd8a4617af8bb25e573 |
ParticipantIDs | crossref_citationtrail_10_1016_j_spmi_2021_107118 crossref_primary_10_1016_j_spmi_2021_107118 |
ProviderPackageCode | CITATION AAYXX |
PublicationCentury | 2000 |
PublicationDate | 2022-04-01 |
PublicationDateYYYYMMDD | 2022-04-01 |
PublicationDate_xml | – month: 04 year: 2022 text: 2022-04-01 day: 01 |
PublicationDecade | 2020 |
PublicationTitle | Micro and nanostructures (2022) |
PublicationYear | 2022 |
References | Yu (10.1016/j.spmi.2021.107118_bib6) 1999; 17 Loher (10.1016/j.spmi.2021.107118_bib1) 2016 Zucker (10.1016/j.spmi.2021.107118_bib9) 2014; 42 Rahman (10.1016/j.spmi.2021.107118_bib36) 2017; 6 Yoon (10.1016/j.spmi.2021.107118_bib20) 2015; 67 Verma (10.1016/j.spmi.2021.107118_bib17) 2018; 119 Huang (10.1016/j.spmi.2021.107118_bib28) 2014; 29 Bharadwaj (10.1016/j.spmi.2021.107118_bib13) 2016 Swamy (10.1016/j.spmi.2021.107118_bib12) 2012; 48 Huang (10.1016/j.spmi.2021.107118_bib30) 2015 (10.1016/j.spmi.2021.107118_bib52) 2020 Henke (10.1016/j.spmi.2021.107118_bib2) 2017 Mohamad (10.1016/j.spmi.2021.107118_bib41) 2018; 255 Ketteniss (10.1016/j.spmi.2021.107118_bib42) 2010; 25 10.1016/j.spmi.2021.107118_bib46 Wu (10.1016/j.spmi.2021.107118_bib18) 2018; 6 Singh (10.1016/j.spmi.2021.107118_bib49) 2021; 20 Chakrabarty (10.1016/j.spmi.2021.107118_bib19) 2020; 141 Ibbetson (10.1016/j.spmi.2021.107118_bib7) 2000; 77 Jiang (10.1016/j.spmi.2021.107118_bib31) 2017; 32 Scott (10.1016/j.spmi.2021.107118_bib10) 2013; 49 Kabemura (10.1016/j.spmi.2021.107118_bib48) 2018; 65 Dora (10.1016/j.spmi.2021.107118_bib8) 2005; vol. 1 Huang (10.1016/j.spmi.2021.107118_bib27) 2014; 29 Huang (10.1016/j.spmi.2021.107118_bib26) 2016; 31 Godwinraj (10.1016/j.spmi.2021.107118_bib44) 2013; 54 Cui (10.1016/j.spmi.2021.107118_bib21) 2019; 7 Guo (10.1016/j.spmi.2021.107118_bib33) 2019; 36 Zhou (10.1016/j.spmi.2021.107118_bib45) 2015; 62 Oka (10.1016/j.spmi.2021.107118_bib14) 2008; 29 Zhao (10.1016/j.spmi.2021.107118_bib22) 2020; 163 Xue (10.1016/j.spmi.2021.107118_bib29) 2019; 35 Hariya (10.1016/j.spmi.2021.107118_bib11) 2015; 51 Uren (10.1016/j.spmi.2021.107118_bib32) 2006; 53 Li (10.1016/j.spmi.2021.107118_bib38) 2018; 118 He (10.1016/j.spmi.2021.107118_bib34) 2016; 662 Peng (10.1016/j.spmi.2021.107118_bib51) 2013; 383 He (10.1016/j.spmi.2021.107118_bib23) 2019; 216 Arslan (10.1016/j.spmi.2021.107118_bib43) 2019; 103 Shrestha (10.1016/j.spmi.2021.107118_bib15) 2019; 66 Hilt (10.1016/j.spmi.2021.107118_bib4) 2013; 58 Lim (10.1016/j.spmi.2021.107118_bib40) 2010; 96 Singh (10.1016/j.spmi.2021.107118_bib24) 2018 Puzyrev (10.1016/j.spmi.2021.107118_bib47) 2015; 106 Esposto (10.1016/j.spmi.2021.107118_bib5) 2011; 58 Khandelwal (10.1016/j.spmi.2021.107118_bib53) 2018; 66 Herwig (10.1016/j.spmi.2021.107118_bib37) 2012; 27 Wang (10.1016/j.spmi.2021.107118_bib50) 2019; 33 Alshahed (10.1016/j.spmi.2021.107118_bib3) 2018; 65 Singh (10.1016/j.spmi.2021.107118_bib25) 2020; 144 Wang (10.1016/j.spmi.2021.107118_bib39) 2018; 6 Bai (10.1016/j.spmi.2021.107118_bib16) 2018; 123 Ketteniss (10.1016/j.spmi.2021.107118_bib35) 2010; 25 |
References_xml | – volume: 17 start-page: 1742 year: 1999 ident: 10.1016/j.spmi.2021.107118_bib6 article-title: Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures publication-title: J. Vac. Sci. Technol., B: Microelect. and Nano. Struct. Processing, Meas. and Phenom. – start-page: 1 year: 2016 ident: 10.1016/j.spmi.2021.107118_bib13 article-title: Design and fabrication of switching characterization set-up for GaN FETs – year: 2020 ident: 10.1016/j.spmi.2021.107118_bib52 – volume: 77 start-page: 250 year: 2000 ident: 10.1016/j.spmi.2021.107118_bib7 article-title: Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors publication-title: Appl. Phys. Lett. doi: 10.1063/1.126940 – volume: 31 start-page: 593 year: 2016 ident: 10.1016/j.spmi.2021.107118_bib26 article-title: Avoiding Si MOSFET avalanche and achieving zero-voltage switching for cascode GaN devices publication-title: IEEE Trans. Power Electron. doi: 10.1109/TPEL.2015.2398856 – volume: 103 start-page: 113517 year: 2019 ident: 10.1016/j.spmi.2021.107118_bib43 article-title: Determination of current transport and trap states density in AlInGaN/GaN heterostructures publication-title: Microelectron. Reliab. doi: 10.1016/j.microrel.2019.113517 – volume: 29 start-page: 668 year: 2008 ident: 10.1016/j.spmi.2021.107118_bib14 article-title: AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications publication-title: IEEE Electron. Device Lett. doi: 10.1109/LED.2008.2000607 – volume: 25 year: 2010 ident: 10.1016/j.spmi.2021.107118_bib35 article-title: Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/25/7/075013 – volume: 141 start-page: 106497 year: 2020 ident: 10.1016/j.spmi.2021.107118_bib19 article-title: Modelling of fin width dependent threshold voltage in fin shaped nano channel AlGaN/GaN HEMT publication-title: Superlattice. Microst. doi: 10.1016/j.spmi.2020.106497 – volume: 25 year: 2010 ident: 10.1016/j.spmi.2021.107118_bib42 article-title: Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates publication-title: Semicond. Sci. Technol. doi: 10.1088/0268-1242/25/7/075013 – start-page: 380 year: 2018 ident: 10.1016/j.spmi.2021.107118_bib24 article-title: Threshold voltage investigation of recessed dual-gate MISHEMT: simulation study – volume: 106 year: 2015 ident: 10.1016/j.spmi.2021.107118_bib47 article-title: Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors publication-title: Appl. Phys. Lett. doi: 10.1063/1.4907675 – volume: 49 start-page: 1383 year: 2013 ident: 10.1016/j.spmi.2021.107118_bib10 article-title: A gallium nitride switched-capacitor circuit using synchronous rectification publication-title: IEEE Trans. Ind. Appl. doi: 10.1109/TIA.2013.2255252 – volume: 58 start-page: 1456 year: 2011 ident: 10.1016/j.spmi.2021.107118_bib5 article-title: Analytical model for power switching GaN-based HEMT design publication-title: IEEE Trans. Electron. Dev. doi: 10.1109/TED.2011.2112771 – volume: 67 start-page: 654 year: 2015 ident: 10.1016/j.spmi.2021.107118_bib20 article-title: DC and RF characteristics of AlGaN/GaN HEMTs on SiC with gate recessed by using ICP etching of BCl3/Cl2 publication-title: J. Kor. Phys. Soc. doi: 10.3938/jkps.67.654 – volume: 216 start-page: 1900115 year: 2019 ident: 10.1016/j.spmi.2021.107118_bib23 article-title: Comparative study between partially and fully recessed-gate enhancement-mode AlGaN/GaN MIS HEMT on the breakdown mechanism publication-title: Phys. Status Solidi doi: 10.1002/pssa.201900115 – volume: 6 start-page: 360 year: 2018 ident: 10.1016/j.spmi.2021.107118_bib39 article-title: Improvement of power performance of GaN HEMT by using quaternary InAlGaN barrier publication-title: IEEE J. of the Electr. Dev. Society doi: 10.1109/JEDS.2018.2807185 – volume: 42 start-page: 1295 year: 2014 ident: 10.1016/j.spmi.2021.107118_bib9 article-title: GaN switches in pulsed power: a comparative study publication-title: IEEE Trans. Plasma Sci. doi: 10.1109/TPS.2014.2312398 – volume: 66 start-page: 80 year: 2018 ident: 10.1016/j.spmi.2021.107118_bib53 article-title: ASM GaN: industry standard model for GaN RF and power devices—Part 1: DC, CV, and RF model publication-title: IEEE Trans. Electron. Dev. doi: 10.1109/TED.2018.2867874 – volume: 662 start-page: 16 year: 2016 ident: 10.1016/j.spmi.2021.107118_bib34 article-title: GaN high electron mobility transistors with AlInN back barriers publication-title: J. Alloys Compd. doi: 10.1016/j.jallcom.2015.12.031 – volume: 62 start-page: 776 year: 2015 ident: 10.1016/j.spmi.2021.107118_bib45 article-title: High-performance enhancement-mode Al2O3/AlGaN/GaN-on-Si MISFETs with 626 MW/cm2 figure of merit publication-title: IEEE Trans. Electron. Dev. doi: 10.1109/TED.2014.2385062 – volume: 32 start-page: 8743 year: 2017 ident: 10.1016/j.spmi.2021.107118_bib31 article-title: All-GaN-integrated cascode heterojunction field effect transistors publication-title: IEEE Trans. Power Electron. doi: 10.1109/TPEL.2016.2643499 – volume: 29 start-page: 2453 year: 2014 ident: 10.1016/j.spmi.2021.107118_bib27 article-title: Evaluation and application of 600 V GaN HEMT in cascode structure publication-title: IEEE Trans. Power Electron. doi: 10.1109/TPEL.2013.2276127 – volume: 96 start-page: 252108 year: 2010 ident: 10.1016/j.spmi.2021.107118_bib40 article-title: Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors publication-title: Appl. Phys. Lett. doi: 10.1063/1.3456561 – volume: vol. 1 start-page: 191 year: 2005 ident: 10.1016/j.spmi.2021.107118_bib8 article-title: Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs – volume: 163 start-page: 107649 year: 2020 ident: 10.1016/j.spmi.2021.107118_bib22 article-title: Effects of recess depths on performance of AlGaN/GaN power MIS-HEMTs on the Si substrates and threshold voltage model of different recess depths for the using HfO2 gate insulator publication-title: Solid State Electron. doi: 10.1016/j.sse.2019.107649 – volume: 65 start-page: 2939 year: 2018 ident: 10.1016/j.spmi.2021.107118_bib3 article-title: Low-dispersion, high-voltage, low-leakage GaN HEMTs on native GaN substrates publication-title: IEEE Trans. Electron. Dev. doi: 10.1109/TED.2018.2832250 – volume: 58 start-page: 145 year: 2013 ident: 10.1016/j.spmi.2021.107118_bib4 article-title: Normally-off GaN transistors for power switching applications publication-title: ECS Trans doi: 10.1149/05804.0145ecst – volume: 29 start-page: 2208 year: 2014 ident: 10.1016/j.spmi.2021.107118_bib28 article-title: Analytical loss model of high voltage GaN HEMT in cascode configuration publication-title: IEEE Trans. Power Electron. doi: 10.1109/TPEL.2013.2267804 – volume: 118 start-page: 213 year: 2018 ident: 10.1016/j.spmi.2021.107118_bib38 article-title: Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application publication-title: Superlattice. Microst. doi: 10.1016/j.spmi.2018.04.022 – volume: 6 start-page: P805 year: 2017 ident: 10.1016/j.spmi.2021.107118_bib36 article-title: Optimization of graded AlInN/AlN/GaN HEMT device performance based on quaternary back barrier for high power application publication-title: ECS J. Solid State Sci. Technol. doi: 10.1149/2.0131712jss – volume: 51 start-page: 3263 year: 2015 ident: 10.1016/j.spmi.2021.107118_bib11 article-title: Five-Megahertz PWM-controlled current-mode resonant dc-dc step-down converter using GaN-HEMTs publication-title: IEEE Trans. Ind. Appl. doi: 10.1109/TIA.2015.2391439 – volume: 6 start-page: 893 year: 2018 ident: 10.1016/j.spmi.2021.107118_bib18 article-title: Normally-OFF GaN MIS-HEMT with F− doped gate insulator using standard ion implantation publication-title: IEEE J. Electron Devices Soc. doi: 10.1109/JEDS.2018.2859769 – volume: 20 start-page: 556 year: 2021 ident: 10.1016/j.spmi.2021.107118_bib49 article-title: Gate stacked dual-gate MISHEMT with 39THz·V johnson’s figure of merit for V-band applications publication-title: J. Comput. Electron. doi: 10.1007/s10825-020-01604-4 – volume: 36 start-page: 243 year: 2019 ident: 10.1016/j.spmi.2021.107118_bib33 article-title: Breakdown mechanisms of power semiconductor devices publication-title: IETE Tech. Rev. doi: 10.1080/02564602.2018.1450652 – volume: 48 start-page: 1418 year: 2012 ident: 10.1016/j.spmi.2021.107118_bib12 article-title: An efficient resonant gate drive scheme for high-frequency applications publication-title: IEEE Trans. Ind. Appl. doi: 10.1109/TIA.2012.2200227 – volume: 35 start-page: 6292 year: 2019 ident: 10.1016/j.spmi.2021.107118_bib29 article-title: Investigation on the short-circuit oscillation of cascode GaN HEMTs publication-title: IEEE Trans. Power Electron. doi: 10.1109/TPEL.2019.2947274 – volume: 119 start-page: 181 year: 2018 ident: 10.1016/j.spmi.2021.107118_bib17 article-title: Polarization engineered enhancement mode GaN HEMT: design and investigation publication-title: Superlattice. Microst. doi: 10.1016/j.spmi.2018.04.041 – volume: 7 start-page: 184375 year: 2019 ident: 10.1016/j.spmi.2021.107118_bib21 article-title: Monolithic GaN half-bridge stages with integrated gate drivers for high temperature DC-DC buck converters publication-title: IEEE Access doi: 10.1109/ACCESS.2019.2958059 – volume: 383 start-page: 25 year: 2013 ident: 10.1016/j.spmi.2021.107118_bib51 article-title: Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2013.07.017 – volume: 65 start-page: 3848 year: 2018 ident: 10.1016/j.spmi.2021.107118_bib48 article-title: Enhancement of breakdown voltage in AlGaN/GaN HEMTs: field plate plus high-k passivation layer and high acceptor density in buffer layer publication-title: IEEE Trans. Electron. Dev. doi: 10.1109/TED.2018.2857774 – volume: 123 start-page: 257 year: 2018 ident: 10.1016/j.spmi.2021.107118_bib16 article-title: Simulation design of high Baliga’s figure of merit normally-off p-GaN gate AlGaN/GaN heterostructure field effect transistors with junction field plates publication-title: Superlattice. Microst. doi: 10.1016/j.spmi.2018.09.005 – volume: 66 start-page: 1694 year: 2019 ident: 10.1016/j.spmi.2021.107118_bib15 article-title: Electrical characteristic of AlGaN/GaN high-electron-mobility transistors with recess gate structure publication-title: IEEE Trans. Electron. Dev. doi: 10.1109/TED.2019.2901719 – ident: 10.1016/j.spmi.2021.107118_bib46 – start-page: 259 year: 2016 ident: 10.1016/j.spmi.2021.107118_bib1 article-title: Compact power electronic modules realized by PCB embedding technology – start-page: 113 year: 2015 ident: 10.1016/j.spmi.2021.107118_bib30 article-title: Evaluation and applications of 600V/650V enhancement-mode GaN devices – volume: 53 start-page: 395 year: 2006 ident: 10.1016/j.spmi.2021.107118_bib32 article-title: Punch-through in short-channel AlGaN/GaN HFETs publication-title: IEEE Trans. Electron. Dev. doi: 10.1109/TED.2005.862702 – start-page: 27 year: 2017 ident: 10.1016/j.spmi.2021.107118_bib2 article-title: High Power Inductive Charging System for an Electric Taxi Vehicle – volume: 54 start-page: 188 year: 2013 ident: 10.1016/j.spmi.2021.107118_bib44 article-title: Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices publication-title: Superlattice. Microst. doi: 10.1016/j.spmi.2012.11.020 – volume: 33 start-page: 1950190 year: 2019 ident: 10.1016/j.spmi.2021.107118_bib50 article-title: The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor publication-title: Int. J. Mod. Phys. B doi: 10.1142/S021797921950190X – volume: 144 start-page: 106574 year: 2020 ident: 10.1016/j.spmi.2021.107118_bib25 article-title: Assessment of Dual-Gate AlGaN/GaN MISHEMT for high temperature DC to DC converter publication-title: Superlattice. Microst. doi: 10.1016/j.spmi.2020.106574 – volume: 27 year: 2012 ident: 10.1016/j.spmi.2021.107118_bib37 article-title: First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET publication-title: Semicond. Sci. Technol. – volume: 255 start-page: 1700394 year: 2018 ident: 10.1016/j.spmi.2021.107118_bib41 article-title: A Theoretical investigation of the miscibility and structural properties of InxAlyGa1− x− yN alloys publication-title: Phys. Status Sol (b) doi: 10.1002/pssb.201700394 |
SSID | ssj0003212365 |
Score | 2.3370106 |
SourceID | crossref |
SourceType | Enrichment Source Index Database |
StartPage | 107118 |
Title | E-mode All-GaN-Integrated cascode MISHEMT with GaN/InAlGaN/GaN backbarrier for high power switching performance: Simulation study |
Volume | 164 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb9NAEF6FVEhwQFBAlJf2wM1y6sc6trlFVSBBuEIkRb1Z-7KU4LhRHlLVG_-In8iM1y_agigHr6zVeLzyfN6dnZ0HIe_CzBWOdJXNPBHYTEplc8G0rYSGmcHJfKbQNJCcDidn7NN5cN7r_ex4Le13YiCvbo0r-R-pQh_IFaNk7yDZhil0wD3IF1qQMLT_JOOxjYVsrFGe2x_5qT2tUz8oS_ItBqtbyXQ2GSdzY24FGnjXtBjl5g5aS3D5XfBNWbcOPQ4xfbG1xtJp1hYeMp6W6za6AC0Is8WqKvrVyU5bV4VCB7_yRKLgxYXJTrvfGNuuByt5x_IwA9bGqIMH44v2UGnFTfj7N7RyFM26MeOX2kSwJcB62XgO7ddGA042C7XPedeOAVvg1v2lnO68METPLhN9PNC39NXz9ZB1ZlzYvrpmBr-xGBi7xBIIV4sBvNIdtMS_Z96-tiI2foq1C9wyRR4p8kgNj3vkAAbneX1yMDr5-vlLY9fzURcoK5g2g69itYxb4fXBdPShjmIzf0weVTsSOjLwekJ6ujgkDzt5Kg_J_dJPWG6fkh8GcvQm5GgFOVpBjiLkKNAcV4A7hot24EYBUhThRku40QZutAO397QFGy3B9oycfRjPTyZ2VcXDlow5OzuKYAs_RMsCj2IBu9NMOFkcqBBr3IWBlr5UksHX4REPQ6kizkCr5lkkhBfoIPSfk35xUegXhHIdcRGEcebrkGVKc4d7MYuxVAwTKhNHxK2_ZSqrFPdYaSVP_yzII2I1z6xNgpe_UL-8E_Ur8qBF-mvSh39OvwEddifeVrD5Ba0vms0 |
linkProvider | Elsevier |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=E-mode+All-GaN-Integrated+cascode+MISHEMT+with+GaN%2FInAlGaN%2FGaN+backbarrier+for+high+power+switching+performance%3A+Simulation+study&rft.jtitle=Micro+and+nanostructures+%282022%29&rft.au=Singh%2C+Preeti&rft.au=Kumari%2C+Vandana&rft.au=Saxena%2C+Manoj&rft.au=Gupta%2C+Mridula&rft.date=2022-04-01&rft.issn=2773-0123&rft.eissn=2773-0123&rft.volume=164&rft.spage=107118&rft_id=info:doi/10.1016%2Fj.spmi.2021.107118&rft.externalDBID=n%2Fa&rft.externalDocID=10_1016_j_spmi_2021_107118 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2773-0123&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2773-0123&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2773-0123&client=summon |