Photoluminescence characterization of PbTe/CdTe quantum dots grown by lattice-type mismatched epitaxy

This paper describes molecular beam epitaxial growth and photoluminescence (PL) properties of PbTe quantum wells (QWs) and quantum dots (QDs) in CdTe matrix. Cross-sectional observation by atomic force microscopy (AFM) and high-resolution transmission electron microscopy (HRTEM) revealed that the Pb...

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Published inJournal of crystal growth Vol. 301; pp. 722 - 725
Main Authors Koike, Kazuto, Harada, Hisashi, Itakura, Tomoyuki, Yano, Mitsuaki, Heiss, Wolfgang, Groiss, Heiko, Kaufmann, Erich, Hesser, Gunter, Schäffler, Friedrich
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.04.2007
Elsevier
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Summary:This paper describes molecular beam epitaxial growth and photoluminescence (PL) properties of PbTe quantum wells (QWs) and quantum dots (QDs) in CdTe matrix. Cross-sectional observation by atomic force microscopy (AFM) and high-resolution transmission electron microscopy (HRTEM) revealed that the PbTe epitaxy mode on CdTe(1 0 0) turned from a conventional two-dimensional (2D) QW-growth at 220 °C to a highly isotropic QD-growth at 280 °C by minimizing the interface energy between rocksalt PbTe and zincblende CdTe. Although both the QWs and QDs can emit mid-infrared PL, the emission from QDs was much stronger and observed even at higher temperatures over 400 K. Below 120 K, however, this intense emission from QDs became low due to the band-alignment change from type-I to type-II by the thermal mismatch between PbTe and CdTe.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.11.115