The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(1 0 0) by ultrahigh vacuum chemical vapor deposition

• Published in: Journal of crystal growth Vol. 310; no. 10; pp. 2508 - 2513
• Main Authors: Zhou, Zhiwen, Li, Cheng, Lai, Hongkai, Chen, Songyan, Yu, Jinzhong
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2008; Elsevier
• Subjects: A1. Characterization; A1. Reflection high energy electron diffraction; A1. X-ray diffraction; A3. Chemical vapor deposition; B1. Germanium; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Vacuum deposition; A1. Reflection high energy electron diffraction; 68.75.+ x; 58.55.JK; 78.30.−j; A3. Chemical vapor deposition; B1. Germanium; A1. Characterization; A1. X-ray diffraction; Epitaxial layers; Hall mobility; Hole mobility; Roughness; Crystal seeds; 68.75.+x; 58.55.JK; 78.30.-j; XRD; RHEED; Crystal perfection; Dislocation density; CVD; A1. Characterization; A1. Reflection high energy electron diffraction; A1. X-ray diffraction; A3. Chemical vapor deposition; Bl. Germanium; Threading dislocation; Temperature effects; Growth mechanism; Germanium; Silicon; Vacuum deposition
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2008.01.016

High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si 0.77Ge 0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5×10 5 cm −2 was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was investigated. We demonstrated that the relatively higher temperature (350 °C) for the growth of Ge seed layer significantly improved the crystal quality and the Hall hole mobility of the Ge epilayer.