Synthesis of high-purity boron nitride single crystals under high pressure by using Ba–BN solvent

• Published in: Journal of crystal growth Vol. 303; no. 2; pp. 525 - 529
• Main Authors: Taniguchi, T., Watanabe, K.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2007; Elsevier
• Subjects: A1. Impurities; A2. Growth from High-temperature solutions; A2. High-pressure crystal growth; B1. Boron nitride; B2. Semiconducting III–V materials; B2. Ultraviolet light luminescence; Cathodoluminescence, ionoluminescence; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from solutions; Materials science; Methods of crystal growth; physics of crystal growth; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Other luminescence and radiative recombination; Physics; 78.55.Cr; A2. High-pressure crystal growth; B2. Semiconducting III–V materials; A2. Growth from High-temperature solutions; A1. Impurities; B1. Boron nitride; 81.05.Ea; B2. Ultraviolet light luminescence; Crystal growth; Cubic lattices; Barium; Al. Impurities; A2. Growth from High-temperature solutions; A2. High-pressure crystal growth; Bl. Boron nitride; B2. Semiconducting III-V materials; B2. Ultraviolet light luminescence; Boron nitrides; Luminescence; Secondary ion mass spectrometry; Cathodoluminescence; High pressure; Monocrystals; Hexagonal crystals; Optical properties; Crystal growth from solutions; 78.55.Cr; 81.05.Ea; III-V semiconductors

High-purity cubic boron nitride (cBN) and hexagonal boron nitride (hBN) single crystals were synthesised at 4.5 GPa and 1500 °C using barium boron nitride as a solvent. Secondary ion mass spectrometry was used to analyse impurities in the crystals. Fine cBN and hBN crystals, whose oxygen and carbon...